New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available Qg (Typ.) • TrenchFET® Power MOSFET RoHS • 100 % Rg Tested COMPLIANT 7.8 nC APPLICATIONS • Load Switch • DC/DC Converter TO-236 (SOT-23) G 1 S 2 S 3 D G Top View Si2305ADS (A5)* * Marking Code D Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free) Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. Document Number: 69940 S-82713-Rev. C, 10-Nov-08 ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit -8 ±8 - 5.4 - 4.3 - 4.1a, b - 3.3a, b - 10 - 1.4 - 0.8a, b 1.7 1.1 0.96a, b 0.62a, b - 50 to 150 260 Unit V A W °C www.vishay.com 1 New Product Si2305ADS Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Steady State Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Symbol RthJA RthJF Typical 100 60 Maximum 130 75 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 175 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 µA -8 ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg gfs tr Rise Time Fall Time Turn-On Delay Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a Pulse Diode Forward Current Body Diode Voltage V nA -1 - 10 -5 0.040 VGS = - 2.5 V, ID = - 3.4 A 0.048 0.060 VGS = - 1.8 V, ID = - 2.0 A 0.070 0.088 VDS = - 5 V, ID = - 4.1 A 8 740 VDS = - 4 V, VGS = 0 V, f = 1 MHz 290 pF 190 VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A VDS = - 4 V, VGS = - 2.5 V, ID = - 4.1 A 7.8 15 4.5 9 1.2 VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 1.4 7 14 13 20 tf 10 20 5 10 VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω 11 17 22 33 16 24 TC = 25 °C - 1.4 ISM Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb nC 1.6 f = 1 MHz td(on) VSD Ω S 53 IS µA A 0.032 tf Fall Time - 0.8 ± 100 48 td(off) Turn-Off DelayTime - 0.45 35 tr Rise Time mV/°C 2.1 VDS = - 8 V, VGS = 0 V VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.1 A Unit V - 55 32 td(off) Turn-Off DelayTime Max. VDS = - 8 V, VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time Typ. - 10 IF = - 3.3 A IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C Ω ns A - 0.8 - 1.2 V 33 50 ns 14 21 nC 14 19 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69940 S-82713-Rev. C, 10-Nov-08 New Product Si2305ADS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 VGS = 4.5 thru 2 V 9 9 6 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 1.5 V 6 3 3 TC = 125 °C TC = 25 °C VGS = 0.5 V VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = - 55 °C 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 1200 VGS = 1.8 V 0.08 900 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 0.06 VGS = 2.5 V Ciss 600 Coss 0.04 300 VGS = 4.5 V Crss 0.02 0 0 2 4 6 8 10 0 2 ID - Drain Current (A) 6 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 4.5 1.5 ID = 4.1 A 3.6 2.7 VDS = 6.4 V 1.8 VDS = 2.5 V, ID = 3.4 A 1.3 (Normalized) VDS = 4 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 1.1 VDS = 4.5 V, ID = 4.1 A 0.9 0.9 0.0 0.0 1.5 3.0 4.5 6.0 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69940 S-82713-Rev. C, 10-Nov-08 7.5 9.0 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si2305ADS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 r DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.1 A 10 TJ = 150 °C 0.08 TJ = 25 °C 1 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 30 0.6 ID = 250 µA Power (W) VGS(th) (V) 20 0.5 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69940 S-82713-Rev. C, 10-Nov-08 New Product Si2305ADS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6.0 I D - Drain Current (A) 4.5 3.0 1.5 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2.0 1.00 1.5 0.75 Power (W) Power (W) Current Derating* 1.0 0.5 0.50 0.25 0.0 0.00 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69940 S-82713-Rev. C, 10-Nov-08 www.vishay.com 5 New Product Si2305ADS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM t1 0.01 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69940. www.vishay.com 6 Document Number: 69940 S-82713-Rev. C, 10-Nov-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1