Si3585DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1 S2 TSOP-6 Top View G1 1 D1 6 G2 3 mm S2 2 5 S1 G2 3 4 D2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol 10 secs P-Channel Steady State 10 secs Steady State Drain-Source Voltage VDS 20 –20 Gate-Source Voltage VGS "12 "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 2.4 2.0 –1.8 –1.5 1.7 1.4 –1.3 –1.2 IDM 8 A –7 1.05 0.75 –1.05 –0.75 1.15 0.83 1.15 0.83 0.59 0.53 0.59 0.53 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF P-Channel Typ Max Typ Max 93 110 93 110 130 150 130 150 75 90 75 90 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71184 S-03512—Rev. B, 04-Apr-01 www.vishay.com 1 Si3585DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 0.6 VDS = VGS, ID = –250 mA P-Ch –0.5 VDS = 0 V, VGS = "12 " V V N-Ch "100 P-Ch "100 VDS = 16 V, VGS = 0 V N-Ch 1 VDS = –16 V, VGS = 0 V P-Ch –1 VDS = 16 V, VGS = 0 V, TJ = 55_C N-Ch 5 VDS = –16 V, VGS = 0 V, TJ = 55_C P-Ch VDS w 5 V, VGS = 4.5 V N-Ch 5 VDS p –5 V, VGS = –4.5 V P-Ch –5 nA m mA –5 A VGS = 4.5 V, ID = 2.4 A N-Ch 0.100 0.125 VGS = –4.5 V, ID = –1.8 A P-Ch 0.160 0.200 VGS = 2.5 V, ID = 1.8 A N-Ch 0.160 0.200 VGS = –2.5 V, ID = –1.2 A P-Ch 0.280 0.340 VDS = 5 V, ID = 2.4 A N-Ch 5 VDS = –5 V, ID = –1.8 A P-Ch 3.6 IS = 1.05 A, VGS = 0 V N-Ch 0.80 1.10 IS = –1.05 A, VGS = 0 V P-Ch –0.83 –1.10 N-Ch 2.1 3.2 4.0 W S V Dynamicb Total Gate Charge Qg P-Ch 2.7 N-Ch 0.3 P-Ch 0.4 N-Ch 0.4 P-Ch 0.6 N-Ch 10 17 P-Ch 11 17 N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W N-Ch 30 50 P-Ch 34 50 P-Channel VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W N-Ch 14 25 P-Ch 19 30 N-Ch 6 12 P-Ch 24 36 IF = 1.05 A, di/dt = 100 A/ms N-Ch 30 50 IF = –1.05 A, di/dt = 100 A/ms P-Ch 20 40 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 2.4 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC P-Channel VDS = –10 V, VGS = –4.5 V, ID = –1.8 A ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71184 S-03512—Rev. B, 04-Apr-01 Si3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL Output Characteristics Transfer Characteristics 10 10 VGS = 4.5 thru 3.5 V TC = –55_C 8 3V I D – Drain Current (A) I D – Drain Current (A) 8 6 2.5 V 4 2V 2 25_C 6 125_C 4 2 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.5 300 250 0.4 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 1.5 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V Ciss 200 150 100 Coss 0.1 50 Crss 0.0 0 0 1 2 3 4 5 6 7 0 4 Gate Charge 20 1.8 VDS = 10 V ID = 2.4 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 16 On-Resistance vs. Junction Temperature 4.5 2.7 1.8 0.9 0.0 0.0 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 3.6 8 VGS = 4.5 V ID = 2.4 A 1.6 1.4 1.2 1.0 0.8 0.5 1.0 1.5 Qg – Total Gate Charge (nC) Document Number: 71184 S-03512—Rev. B, 04-Apr-01 2.0 2.5 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 10 0.32 r DS(on)– On-Resistance ( W ) I S – Source Current (A) ID = 2.4 A TJ = 150_C 1 TJ = 25_C ID = 1 A 0.24 0.16 0.08 0.00 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 8 ID = 250 mA 6 Power (W) V GS(th) Variance (V) 0.2 –0.0 –0.2 4 2 –0.4 –0.6 –50 0 –25 0 25 50 75 100 125 150 0.1 0.01 10 1 TJ – Temperature (_C) 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71184 S-03512—Rev. B, 04-Apr-01 Si3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Output Characteristics Transfer Characteristics 10 8 VGS = 4.5 thru 4 V TC = –55_C 3.5 V 8 I D – Drain Current (A) I D – Drain Current (A) 6 3V 6 2.5 V 4 2V 2 25_C 125_C 4 2 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 0.6 450 0.5 Ciss 360 VGS = 2.5 V C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 1.5 0.4 0.3 VGS = 3.6 V 0.2 270 180 Coss VGS = 4.5 V 90 0.1 0.0 Crss 0 0 1 2 3 4 5 ID – Drain Current (A) Document Number: 71184 S-03512—Rev. B, 04-Apr-01 6 7 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) www.vishay.com 5 Si3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Gate Charge On-Resistance vs. Junction Temperature 3.6 1.8 VDS = 10 V ID = 2.4 A VGS = 10 V ID = 2.4 A 1.6 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 4.5 2.7 1.8 0.9 1.4 1.2 1.0 0.8 0.6 0.0 0.0 0.6 1.2 1.8 2.4 0.4 –50 3.0 –25 Qg – Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 ID = 1.8 A r DS(on)– On-Resistance ( W ) I S – Source Current (A) 0.5 TJ = 150_C 1 TJ = 25_C ID = 1.2 A 0.4 0.3 0.2 0.1 0.0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 VSD – Source-to-Drain Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 8 ID = 250 mA 6 Power (W) V GS(th) Variance (V) 0.4 0.2 0.0 4 2 –0.2 –0.4 –50 0 –25 0 25 50 75 TJ – Temperature (_C) www.vishay.com 6 100 125 150 0.01 0.1 1 10 30 Time (sec) Document Number: 71184 S-03512—Rev. B, 04-Apr-01 Si3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71184 S-03512—Rev. B, 04-Apr-01 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 7