Si5473DC Vishay Siliconix New Product P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFETS D Low rDS(on) and Excellent Power Handling In Compact Footprint rDS(on) (W) ID (A) 0.027 @ VGS = - 4.5 V - 8.1 0.0335 @ VGS = - 2.5 V - 7.3 APPLICATIONS 0.045 @ VGS = - 1.8 V - 6.3 D Battery and Load Switch for Portable Devices S 1206-8 ChipFETr 1 D D G D D D D G S Marking Code BI XXX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5473DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V - 5.9 - 8.1 - 5.9 - 4.3 IDM Continuous Source Currenta "20 - 2.1 - 1.1 2.5 1.3 1.3 0.7 TJ, Tstg Unit - 55 to 150 Soldering Recommendations (Peak Temperature)b, c A W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 80 95 15 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72261 S-31265—Rev. A, 16-Jun-03 www.vishay.com 1 Si5473DC Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA - 0.40 Typ Max Unit - 1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 85_C -5 VDS p - 5 V, VGS = - 4.5 V - 20 mA A VGS = - 4.5 V, ID = - 5.9 A 0.022 0.027 VGS = - 2.5 V, ID = - 5.3 A 0.028 0.0335 VGS = - 1.8 V, ID = - 2.2 A 0.036 0.045 gfs VDS = - 5 V, ID = - 5.9 A 20 VSD IS = - 1.1 A, VGS = 0 V - 0.8 - 1.2 21 32 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg VDS = - 6 V, VGS = - 4.5 V, ID = - 5.9 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 6.0 Turn-On Delay Time td(on) 25 tr 50 75 145 220 90 135 70 105 Rise Time Turn-Off Delay Time VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3.1 IF = - 1.1 A, di/dt = 100 A/ms 40 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 15 10 1.5 V 5 12 8 TC = - 55_C 4 25_C 1V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 - 55_C 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 72261 S-31265—Rev. A, 16-Jun-03 Si5473DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3000 Ciss 2500 0.08 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.10 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 2000 1500 Coss 1000 Crss 500 VGS = 4.5 V 0.00 0 0 5 10 15 20 0 2 4 ID - Drain Current (A) 8 10 12 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 1.4 5 VDS = 6 V ID = 5.9 A 4 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 3 2 1 VGS = 4.5 V ID = 5.9 A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 5 10 15 20 0.6 - 50 25 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.08 ID = 5.9 A 0.06 0.04 ID = 2.2 A 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72261 S-31265—Rev. A, 16-Jun-03 1.2 1.4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si5473DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10 - 3 150 10 - 2 10 - 1 1 10 100 600 Time (sec) TJ - Temperature (_C) Safe Operating Area 100 IDM Limited rDS(on) Limited I D - Drain Current (A) 10 P(t) = 0.001 1 0.1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72261 S-31265—Rev. A, 16-Jun-03 Si5473DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 Document Number: 72261 S-31265—Rev. A, 16-Jun-03 10 - 3 10 - 2 Square Wave Pulse Duration (sec) 10 - 1 1 www.vishay.com 5