Si4943BDY New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −10 V −8.4 0.031 @ VGS = −4.5 V −6.7 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Load Switching − Computer − Game Systems D Battery Switching − 2-Cell Li-Ion S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4943BDY—E3 Si4943BDY-T1—E3 (with Tape and Reel) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −8.4 −6.3 −6.7 −5.1 IDM −30 −1.7 −0.9 2.0 1.1 1.3 0.7 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 46 62.5 85 110 26 35 Unit _C/W C/W Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 73073 S-41527—Rev. A, 16-Aug-04 www.vishay.com 1 Si4943BDY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1 Typ Max Unit −3 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "20 V VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 55_C −5 VDS = −5 V, VGS = −10 V rDS(on) DS( ) Forward Transconductancea Diode Forward Voltagea mA −30 A VGS = −10 V, ID = −8.4 A 0.016 0.019 VGS = −4.5 V, ID = −6.7 A 0.026 0.031 gfs VDS = −10 V, ID = −8.4 A 20 VSD IS = −1.7 A, VGS = 0 V −0.75 −1.2 17 25 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = −10 V, VGS = −5 V, ID = −8.4 A 5 nC 6.7 f = 1 MHz 12 18 td(on) 11 17 tr 10 15 94 140 60 90 55 80 VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 6 IF = −1.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 5 V 4V 24 I D − Drain Current (A) I D − Drain Current (A) 24 18 12 6 18 12 TC = 125_C 6 25_C 3V −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Document Number: 73073 S-41527—Rev. A, 16-Aug-04 Si4943BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2100 1800 0.05 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.06 0.04 VGS = 4.5 V 0.03 0.02 VGS = 10 V Ciss 1500 1200 900 600 0.01 Coss 300 0.00 Crss 0 0 5 10 15 20 25 30 0 4 ID − Drain Current (A) 12 16 20 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 10 V ID = 8.4 A VGS = 10 V ID = 8.4 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 6 4 2 1.2 1.0 0.8 0 0 5 10 15 20 25 0.6 −50 30 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.08 30 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 0.07 TJ = 150_C 10 TJ = 25_C 0.06 0.05 ID = 8.4 A 0.04 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 73073 S-41527—Rev. A, 16-Aug-04 1.2 1.4 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4943BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.8 50 40 ID = 250 mA 0.4 30 Power (W) V GS(th) Variance (V) 0.6 0.2 20 0.0 10 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area, Junction-to-Ambient IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 ms 1 0.1 10 ms ID(on) Limited 100 ms 1s 10 s TA = 25_C Single Pulse dc 0.01 0.1 BVDSS Limited 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73073 S-41527—Rev. A, 16-Aug-04 Si4943BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 73073 S-41527—Rev. A, 16-Aug-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5