VISHAY SI4943BDY

Si4943BDY
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
−20
rDS(on) (W)
ID (A)
0.019 @ VGS = −10 V
−8.4
0.031 @ VGS = −4.5 V
−6.7
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D Load Switching
− Computer
− Game Systems
D Battery Switching
− 2-Cell Li-Ion
S1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
D1
Ordering Information: Si4943BDY—E3
Si4943BDY-T1—E3 (with Tape and Reel)
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
−20
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
−8.4
−6.3
−6.7
−5.1
IDM
−30
−1.7
−0.9
2.0
1.1
1.3
0.7
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
46
62.5
85
110
26
35
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
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Si4943BDY
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = −250 mA
−1
Typ
Max
Unit
−3
V
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain Source On-State
Drain-Source
On State Resistancea
VDS = 0 V, VGS = "20 V
VDS = −20 V, VGS = 0 V
−1
VDS = −20 V, VGS = 0 V, TJ = 55_C
−5
VDS = −5 V, VGS = −10 V
rDS(on)
DS( )
Forward Transconductancea
Diode Forward Voltagea
mA
−30
A
VGS = −10 V, ID = −8.4 A
0.016
0.019
VGS = −4.5 V, ID = −6.7 A
0.026
0.031
gfs
VDS = −10 V, ID = −8.4 A
20
VSD
IS = −1.7 A, VGS = 0 V
−0.75
−1.2
17
25
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS = −10 V, VGS = −5 V, ID = −8.4 A
5
nC
6.7
f = 1 MHz
12
18
td(on)
11
17
tr
10
15
94
140
60
90
55
80
VDD = −10 V, RL = 10 W
ID ^ −1 A, VGEN = −10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
6
IF = −1.7 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
VGS = 10 thru 5 V
4V
24
I D − Drain Current (A)
I D − Drain Current (A)
24
18
12
6
18
12
TC = 125_C
6
25_C
3V
−55_C
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
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2
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS − Gate-to-Source Voltage (V)
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
Si4943BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2100
1800
0.05
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.06
0.04
VGS = 4.5 V
0.03
0.02
VGS = 10 V
Ciss
1500
1200
900
600
0.01
Coss
300
0.00
Crss
0
0
5
10
15
20
25
30
0
4
ID − Drain Current (A)
12
16
20
VDS − Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
VDS = 10 V
ID = 8.4 A
VGS = 10 V
ID = 8.4 A
8
1.4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
8
6
4
2
1.2
1.0
0.8
0
0
5
10
15
20
25
0.6
−50
30
−25
0
Qg − Total Gate Charge (nC)
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
30
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
0.07
TJ = 150_C
10
TJ = 25_C
0.06
0.05
ID = 8.4 A
0.04
0.03
0.02
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
1.2
1.4
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si4943BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
40
ID = 250 mA
0.4
30
Power (W)
V GS(th) Variance (V)
0.6
0.2
20
0.0
10
−0.2
−0.4
−50
−25
0
25
50
75
100
125
0
10−2
150
10−1
TJ − Temperature (_C)
1
10
100
600
Time (sec)
100
Safe Operating Area, Junction-to-Ambient
IDM Limited
rDS(on) Limited
I D − Drain Current (A)
10
1 ms
1
0.1
10 ms
ID(on)
Limited
100 ms
1s
10 s
TA = 25_C
Single Pulse
dc
0.01
0.1
BVDSS Limited
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
Si4943BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
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