Si7940DP New Product Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 APPLICATIONS D Point-of-Load Synchronous Rectifier - 5-V or 3.3-V BUS Step Down - Qg Optimized for 500-kHz + Operation D Synchronous Buck Shoot-Through Resistant D1 D2 PowerPAKt S1 6.15 mm 5.15 mm 1 G1 2 S2 3 G1 G2 G2 4 D1 8 D1 7 D2 6 D2 S1 S2 N-Channel MOSFET N-Channel MOSFET 5 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 7.6 9.5 IDM Continuous Source Current (Diode Conduction)a V 11.8 ID 6.1 A 20 2.9 1.1 3.5 1.4 2.2 0.9 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 26 35 60 85 3.9 5.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71845 S-21167—Rev. B, 29-Jul-02 www.vishay.com 1 Si7940DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.5 V VDS = 0 V, VGS = "8 V "100 nA VDS = 9.6 V, VGS = 0 V 1 VDS = 9.6 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 4.5 V rDS(on) Forward Transconductancea Diode Forward Voltagea 20 m mA A VGS = 4.5 V, ID = 11.8 A 0.014 0.017 VGS = 2.5 V, ID = 9.8 A 0.020 0.025 gfs VDS = 5 V, ID = 11.8 A 32 VSD IS = 2.9 A, VGS = 0 V 0.77 1.2 11.5 17 W S V Dynamicb Total Gate Charge Qg VDS = 6 V, VGS = 4.5 V, ID = 11.8 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 30 45 50 75 60 90 25 40 40 80 Rise Time tr Turn-Off Delay Time VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3.2 IF = 2.9 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 2V 8 4 12 8 TC = 125_C 4 25_C -55 _C 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 71845 S-21167—Rev. B, 29-Jul-02 Si7940DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2500 0.04 2000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.05 0.03 VGS = 4.5 V 0.02 VGS = 2.5 V 0.01 Ciss 1500 1000 Coss Crss 500 0.00 0 0 4 8 12 16 20 0 2 4 ID - Drain Current (A) 8 10 12 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 6 V ID = 11.8 A r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 4 3 2 1 VGS = 4.5 V ID = 11.8 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 0.6 -50 15 -25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.05 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.04 ID = 5 A 0.03 ID = 11.8 A 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71845 S-21167—Rev. B, 29-Jul-02 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7940DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 40 32 ID = 250 mA 24 Power (W) V GS(th) Variance (V) 0.2 -0.0 -0.2 16 -0.4 8 -0.6 -50 -25 0 25 50 75 100 125 0 0.01 150 0.1 10 1 100 600 Time (sec) TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 IDM Limited rDS(on) Limited I D - Drain Current (A) 10 1 ms 10 ms 1 0.1 ID(on) Limited 100 ms 1s 10 s dc TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71845 S-21167—Rev. B, 29-Jul-02 Si7940DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Document Number: 71845 S-21167—Rev. B, 29-Jul-02 www.vishay.com 5