FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. • –5 A, –20 V. RDS(ON) = 44 mΩ @ VGS = –4.5 V RDS(ON) = 64 mΩ @ VGS = –2.5 V RDS(ON) = 95 mΩ @ VGS = –1.8 V • Low gate charge, High Power and Current handling Applications capability • Battery management/Charger Application • High performance trench technology for extremely • Load switch low RDS(ON) • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact 4 3 5 2 6 1 Bottom Drain Contact MOSFET Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed PD Units –20 ±8 V V –5 A –20 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, Tstg Ratings Operating and Storage Junction Temperature Range 1.8 W 1.8 0.9 –55 to +150 °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 68 1 °C/W Package Marking and Ordering Information .036 2004 Fairchild Semiconductor Corporation FDC6036P 7’’ 8mm 3000 units FDC6036P Rev C2 (W) FDC6036P January 2004 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = –250 µA BVDSS Drain–Source BreakdownVoltage VGS = 0 V, ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –16 V, IGSS Gate–Body Leakage VGS = ±8 V, VDS = 0 V ID = –250 µA On Characteristics –20 V –24 VGS = 0 V mV/°C –1 µA ±100 nA (Note 2) –0.4 –0.7 –1.5 V VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 4.4 VGS = –4.5 V, ID = –5.0 A ID = –4.0 A VGS = –2.5 V, ID = –3.2 A VGS = –1.8 V, VGS = –4.5 V,ID = –5 A,TJ=125°C 37 52 74 51 gfs Forward Transconductance VDS = –5 V, ID = –5 A 16 S VDS = –10 V, f = 1.0 MHz VGS = 0 V, 992 pF 169 pF 85 pF mΩ mV/°C 44 64 95 61 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics V GS = 15 mV f = 1.0 MHz 8.6 VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 12 24 ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 10 20 ns td(off) Turn–Off Delay Time 40 64 ns tf Turn–Off Fall Time 20 36 ns Qg Total Gate Charge 10 14 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –5 A, 1.7 nC 2.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = –1.25 A IF = –5 A, diF/dt = 100 A/µs (Note 2) –0.7 –1.25 A –1.2 V 19 ns 7.8 nC FDC6036P Rev C2 (W) FDC6036P Electrical Characteristics TA = 25°C unless otherwise noted NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 60°C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 130°C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC6036P Rev C2 (W) FDC6036P Electrical Characteristics FDC6036P Dimensional Outline and Pad Layout Bottom View Recommended Landing Pattern Top View FDC6036P Rev C2 (W) FDC6036P Typical Characteristics 2.6 -ID, DRAIN CURRENT (A) VGS =-4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -2.5V 15 -2.0V 10 -1.8V 5 -1.5V 2.4 2.2 VGS =-1.8V 2 1.8 -2.0V 1.6 -2.5V 1.4 1.2 -4.5V 1 0.8 0 0 1 2 3 4 0 5 5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. ID = -5A VGS = -4.5V 1.3 ID = -2.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 0.15 1.4 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 0.13 0.11 0.09 TA = 125oC 0.07 TA = 25oC 0.05 0.03 150 1 TJ, JUNCTION TEMPERATURE (oC) 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V o TA = -55 C -IS, REVERSE DRAIN CURRENT (A) 15 -ID, DRAIN CURRENT (A) 10 -ID, DRAIN CURRENT (A) 25oC 12 125oC 9 6 3 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6036P Rev C2 (W) FDC6036P Typical Characteristics 1500 ID = -5A Vds = -5V -10V f = 1MHz VGS = 0 V 1250 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 Ciss 1000 1 750 500 Coss 250 Crss 0 0 0 2 4 6 8 10 12 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 10 100 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 10s DC 10 1 VGS = -4.5V SINGLE PULSE o RθJA = 130 C/W 0.1 SINGLE PULSE o RθJA = 130 C/W 8 POWER (W) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) o TA = 25 C 6 4 2 o TA = 25 C 0.01 0.1 1 10 100 0 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 130 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 t2 0.02 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC6036P Rev C2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7