FDS6298 tm 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Low gate charge (10nC @ VGS=5V) Applications Very low Miller Charge (3nC) 13 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V Control Switch for DC-DC Buck converters Low Rg (1 Ohm) Notebook Vcore ROHS Compliant Telecom / Networking Point of Load DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V Drain Current ID – Continuous (Note 1a) – Pulsed 13 50 A Power Dissipation for Single Operation (Note 1a) 3.0 Power Dissipation for Single Operation (Note 1b) 1.2 EAS Single Pulse Avalanche Energy (Note 3) 181 mJ TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C PD W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6298 FDS6298 13’’ 12mm 2500 units 2007 Fairchild Semiconductor Corporation FDS6298 Rev. C1 ( W) FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET April 2007 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage On Characteristics VGS = 0 V, ID = 250 µA 30 - - V ID = 250 µA, Referenced to 25°C - 30 - mV/°C VDS = 24 V, VGS = 0 V - - 1 µA VGS = ±20 V, VDS = 0 V - - ±100 nA VDS = VGS, ID = 250 µA 1 1.7 3 V ID = 250 µA, Referenced to 25°C - –5 - mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS(ON) Static Drain–Source On–Resistance VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS= 10 V, ID = 13 A, TJ=125°C - 7.4 9.4 11 9 12 15 mΩ gFS Forward Transconductance VDS = 10 V, ID = 13 A - 58 - S - 1108 - pF - 310 - pF - 109 - pF 0.3 1 1.7 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω - 11 20 ns - 5 10 ns ns td(off) Turn–Off Delay Time - 27 43 tf Turn–Off Fall Time - 7 14 ns Qg Total Gate Charge - 10 14 nC Qgs Gate–Source Charge - 3 - nC Qgd Gate–Drain Charge - 3 - nC - 0.74 1.2 V VDS = 15 V, ID = 13 A, VGS = 5 V Drain–Source Diode Characteristics trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VSD VGS = 0 V, IS = 2.1 A (Note 2) IF = 13 A, dIF/dt = 100 A/µs - 27 - ns - 13 - nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a) 50°C/W when mounted 2 on a 1in pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V FDS6298 Rev. C1 (W) FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Electrical Characteristics 2.6 VGS = 10V ID, DRAIN CURRENT (A) 70 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 80 6.0V 60 3.5.V 50 40 30 3.0V 20 10 2.4 VGS = 3.0V 2.2 2 1.8 3.5V 1.6 4.0V 1.4 4.5V 0 0.5 1 1.5 2 0 2.5 10 20 10V 30 40 50 60 70 80 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.028 1.8 ID = 13A VGS = 10V 1.6 ID = 6.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 1 0.8 0 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.024 0.02 0.016 TA = 125oC 0.012 0.008 TA = 25oC 0.004 150 2 o 4 TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 80 25oC TA = -55oC 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 70 ID, DRAIN CURRENT (A) 5.0V 1.2 125o C 50 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6298 Rev. C1 (W) FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Typical Characteristics 1500 ID = 13A VDS = 10V 8 1200 20V 6 4 2 900 600 COSS 300 0 CRSS 0 0 4 8 12 16 20 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 100 RDS(ON) LIMIT 10 1 100µs IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 10 25 125 1 0.01 100 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE R θJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 11. Single Pulse Maximum Power Dissipation. FDS6298 Rev. C1 (W) FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 12. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6298 Rev. C1 (W) FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ 2 E CMOS™ ® EcoSPARK EnSigna™ FACT Quiet Series™ ® FACT ® FAST FASTr™ FPS™ ® FRFET GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ ® OPTOLOGIC ® OPTOPLANAR PACMAN™ PDP-SPM™ POP™ ® Power220 ® Power247 PowerEdge™ PowerSaver™ Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ ® SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ ® The Power Franchise TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ μSerDes™ ® UHC UniFET™ VCX™ Wire™ ™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com