SSM5H12TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications • 1.8-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ± 12 V DC ID 1.9 Pulse IDP 3.8 Drain current PD (Note 1) Power dissipation Channel temperature A 0.5 t = 10s 0.8 Tch 150 W UFV °C Schottky Barrier Diode (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) 0.7 A Peak one cycle surge forward current IFSM 2 (50Hz) A Tj 125 °C Symbol Rating Unit Tstg −55 to 125 °C Junction temperature JEDEC ― JEITA ― TOSHIBA 2-2R1A Weight: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2) Marking 5 Equivalent Circuit (top view) 4 5 3 1 4 KEW 1 2 2 1 3 2008-09-27 SSM5H12TU MOSFET Electrical Characteristics (Ta = 25°C) Characteristic Symbol Drain-source breakdown voltage Test Conditions Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 18 ⎯ ⎯ Unit V Drain cut-off current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 1.0 A (Note 2) 2.0 3.9 ⎯ S ID = 1.0 A, VGS = 4.0 V (Note 2) ⎯ 103 133 ID = 0.8 A, VGS = 2.5 V (Note 2) ⎯ 125 177 ID = 0.5 A, VGS = 1.8 V (Note 2) ⎯ 165 296 ⎯ 123 ⎯ ⎯ 43 ⎯ RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance VDS = 15V, VGS = 0 V, f = 1 MHz Crss ⎯ 18 ⎯ Total gate charge Qg ⎯ 1.9 ⎯ Gate-source charge Qgs ⎯ 1.1 ⎯ VGS = 4 V ⎯ 0.8 ⎯ Turn-on time ton VDD = 15 V, ID = 1.0 A, ⎯ 9.2 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 6.4 ⎯ ⎯ -0.83 -1.2 Gate-drain charge Switching time VDS = 15V, ID = 1.9 A Qgd Drain-source forward voltage VDSF ID = -1.9 A, VGS = 0 V (Note 2) mΩ pF nC ns V Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD (c) VOUT VDD = 15 V RG = 4.7 Ω Duty.≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% VDD VDS (ON) 90% 10% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. 2 2008-09-27 SSM5H12TU Schottky Barrier Diode Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Total capacitance Symbol Test Condition Min Typ. Max Unit VFM (1) IF = 0.5 A ⎯ 0.34 0.41 V VFM (2) IF = 0.7 A ⎯ 0.37 0.44 V IRRM VR = 15 V ⎯ 60 200 μA VR = 0 V, f = 1 MHz ⎯ 139 ⎯ pF CT Precaution The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus, excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both forward and reverse loss into consideration. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Thermal resistance Rth (j-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 3 2008-09-27 SSM5H12TU MOSFET ID – VDS 10 V ID – VGS 10 Common Source Ta = 25 °C Pulse test 2.5 V 4.0 V (A) ID Drain current Drain current 2 1.5 V 1 VGS = 1.2 V 0 0.2 0.4 0.6 0.8 Drain–source voltage − 25 °C 1.0 25 °C Ta = 100 °C 100 − 25 °C 4 6 8 Gate–source voltage 10 VGS 300 200 1.8 V 2.5 V 100 0 12 VGS = 4.0 V 0 (V) 2 1 Drain current 0.8 A / 2.5 V 1.0 A / 4.0 V 100 0 50 Ambient temperature (A) Common Source VDS = 3 V ID = 1 mA Vth (V) Common Source Pulse test Gate threshold voltage Drain–source ON-resistance RDS (ON) (mΩ) ID 4 Vth – Ta ID = 0.5 A / VGS = 1.8 V 0 −50 3 1.0 300 200 (V) Common Source Ta = 25°C Pulse test RDS (ON) – Ta 400 VGS RDS (ON) – ID 400 200 2 2.0 Gate–source voltage ID =1.0A Common Source Pulse test 0 25 °C 0.001 (V) 300 0 Ta = 100 °C 0.01 RDS (ON) – VGS 400 Drain–source ON-resistance RDS (ON) (mΩ) VDS 0.1 0.0001 0 1.0 Drain–source ON-resistance RDS (ON) (mΩ) 0 Common Source VDS = 3 V Pulse test 1 1.8 V 3 ID (A) 4 100 Ta 0.5 0 −50 150 (°C) 0 50 Ambient temperature 4 100 Ta 150 (°C) 2008-09-27 SSM5H12TU IDR – VDS |Yfs| – ID 10 10 (A) Common Source VDS = 3 V Ta = 25°C IDR Pulse test 3 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) MOSFET 1 0.3 1 25 °C 0.1 Common Source VGS = 0 V Pulse test D Ta =100 °C 0.01 −25 °C 0.1 0.01 1 0.1 Drain current ID S 0.001 0 10 –0.5 (A) C – VDS VDS Common Source VDD = 15 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω toff (ns) Ciss t 100 Switching time C (pF) 300 50 30 Coss 10 Crss 3 (V) t – ID 1000 500 5 –1.5 –1.0 Drain–source voltage 1000 Capacitance IDR G Common Source Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 100 10 tf ton tr 1 10 Drain–source voltage 1 0.01 100 VDS (V) 0.1 Drain current 1 ID 10 (A) Dynamic Input Characteristic 10 Gate–Source voltage VGS (V) Common Source ID = 1.9 A Ta = 25°C 8 6 VDD = 15 V VDD = 24 V 4 2 0 0 1 2 Total Gate Charge 3 Qg 4 (nC) 5 2008-09-27 SSM5H12TU Schottky Barrier Diode PF(AV) – IF(AV) IF – V F 0.5 Average forward power dissipation PF (AV) (W) Instantaneous forward current IF (mA) 1000 100 25 °C 10 1 DC 0.3 α = 30° 60 90 120 180 0.2 Rectangular waveform 0.1 0° α 360° Conduction angle α 0 0.1 0 0.1 0.3 0.2 0.5 0.4 Instantaneous forward voltage VF 0 0.2 0.4 0.6 1.0 0.8 Average forward current (V) 1.2 IF (AV) (A) CT – VR Ta max – IF (AV) (typical) 100 140 f = 1 MHz Ta = 25°C (pF) 120 CT 100 80 Total capacitance Maximum allowable temperature Ta max (°C) 0.4 DC 60 40 20 0 0 0.2 0.4 0.6 0.8 Average forward current 1.0 1.2 1.4 10 1 IF (AV) (A) 1 10 Reverse voltage 6 100 VR (V) 2008-09-27 SSM5H12TU Schottky Barrier Diode IR – V R IR – Tj 1000 (typical) 1000 100 30 15 10 Reverse current 10 Reverse current 20 100 IR IR (μA) (mA) Pulse test 25 °C 10 5 1 0.1 VR = 3 V Pulse test e 1 0 10 5 15 Reverse voltage 20 VR 25 Average reverse power dissipation PR (AV) (W) 50 Junction temperature (V) PR (AV) – VR 8 0.01 0 30 100 Tj 150 (°C) (typical) Rectangular waveform 360° 0° 6 VR 300 α Conduction angle α Tj = 125°C 4 DC 240 180 2 120 α = 60° 0 0 5 10 Reverse voltage 15 VR 20 (V) 7 2008-09-27 SSM5H12TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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