TK5P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5P50D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2 10.0 1.14MAX 2.29 0.76 ± 0.12 2 1 +0.25 −0.12 Symbol 1.52 Characteristics 2.3 ± 0.1 Absolute Maximum Ratings (Ta = 25°C) 0.58MAX 6.1 ± 0.12 +0.4 −0.6 6.6 ± 0.2 5.34 ± 0.13 0.07 ± 0.07 Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 1.01MAX • • • • Unit: mm 3 A IDP 20 Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy (Note 2) EAS 128 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 1. 2. GATE DRAIN （HEAT SINK） 3. SOURCE JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7K1A Weight : 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.67 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 2010-01-20 TK5P50D Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.4 ⎯ 4.4 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 2.5 A ⎯ 1.3 1.5 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 2.5 A 0.8 3.0 ⎯ S Input capacitance Ciss ⎯ 490 ⎯ Reverse transfer capacitance Crss ⎯ 3 ⎯ Output capacitance Coss ⎯ 55 ⎯ ⎯ 18 ⎯ ⎯ 40 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton tf Turn-off time VOUT RL = 80 Ω 50 Ω Switching time Fall time ID = 2.5 A 10 V VGS 0V tr VDD ≈ 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 5 A pF ns ⎯ 8 ⎯ ⎯ 55 ⎯ ⎯ 11 ⎯ ⎯ 6 ⎯ ⎯ 5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 5 A (Note 1) IDRP ⎯ ⎯ ⎯ 20 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 5 A, VGS = 0 V, ⎯ 1000 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 5.0 ⎯ μC Marking (Note 4) TK5P50D Part No. (or abbreviation code) Lot No. Note 4: * Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last 2digits of the calendar year) 2 2010-01-20 TK5P50D ID – VDS 10 COMMON SOURCE Tc = 25°C PULSE TEST 7 10 8 (A) 4 ID – VDS 10 6.5 3 6 2 5.5 1 VGS = 5 V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE 7 6 6.5 4 6 2 VGS = 5 V 0 0 10 VDS (V) 10 20 VDS (V) COMMON SOURCE VDS = 20 V PULSE TEST 6 4 25 100 2 0 0 2 4 Tc = −55 °C 6 10 8 GATE-SOURCE VOLTAGE VGS 20 VDS 50 (V) COMMON SOURCE Tc = 25℃ PULSE TEST 16 12 ID = 5 A 8 2.5 4 1.2 0 0 4 8 12 GATE-SOURCE VOLTAGE (V) ⎪Yfs⎪ – ID 16 VGS 20 (V) RDS (ON) – ID 10 10 COMMON SOURCE VDS = 10 V PULSE TEST DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 40 VDS – VGS DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID 8 30 DRAIN-SOURCE VOLTAGE ID – VGS 10 COMMON SOURCE Tc = 25°C PULSE TEST 8 8 DRAIN CURRENT ID DRAIN CURRENT ID (A) 5 Tc = −55 °C 25 100 1 0.1 0.1 1 DRAIN CURRENT ID COMMON SOURCE Tc = 25°C PULSE TEST VGS = 10, 15 V 1 0.1 0.1 10 (A) 1 DRAIN CURRENT ID 3 10 (A) 2010-01-20 TK5P50D RDS (ON) – Tc IDR – VDS 10 3 5 2.5 2 ID = 1.2 A 1 COMMON SOURCE Tc = 25°C PULSE TEST 1 10,15 5 −40 0 40 80 CASE TEMPERATURE 120 Tc 0.1 0 160 (°C) 3 −0.3 1 CAPACITANCE – VDS GATE THRESHOLD VOLTAGE Vth (V) (V) 100 Coss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C Crss 1 10 3 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 −80 100 VDS 4 (V) −40 VDS (V) DRAIN-SOURCE VOLTAGE 80 60 40 20 CASE TEMPERATURE 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 100 80 40 CASE TEMPERATURE PD – Tc 40 0 120 Tc 160 (°C) 500 20 VDS 400 200 VDD = 100 V 400 300 12 200 8 COMMON SOURCE VGS ID = 5 A Tc = 25°C PULSE TEST 100 0 0 4 8 4 0 20 16 12 TOTAL GATE CHARGE 4 16 Qg (V) (pF) C CAPACITANCE VDS −1.5 Vth – Tc Ciss DRAIN-SOURCE VOLTAGE DRAIN POWER DISSIPATION PD (W) −1.2 5 1000 0 0 −0.9 DRAIN-SOURCE VOLTAGE 10000 1 0.1 VGS = 0, −1 V −0.6 VGS 0 −80 GATE-SOURCE VOLTAGE 4 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON-RESISTANCE RDS (ON) ( Ω) 5 (nC) 2010-01-20 TK5P50D NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 PDM 0.1 0.1 0.05 t SINGLE PULSE T 0.02 Duty = t/T Rth (ch-c) = 1.56 °C/W 0.01 0.01 10μ 100μ 1m 10m PULSE WIDTH 100m 1 tw (s) SAFE OPERATING AREA EAS – Tch 150 100 10 100 μs * ID (A) ID max (continuous) 1 ms * DC operation Tc = 25°C 0.1 PULSE Tc = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1 10 90 60 30 0 25 *: SINGLE NONREPETITIVE 0.01 120 50 100 DRAIN-SOURCE VOLTAGE 15 V 1000 VDS 75 100 125 150 CHANNEL TEMPEATURE (INITIAL) Tch(°C) VDSS max DRAIN CURRENT 1 AVALANCHE ENERGY EAS (mJ) ID max (pulsed) * 0.001 10 (V) BVDSS IAR 0V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 8.67 mH 5 VDS WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜ ⎟ 2 ⎝ B VDSS − VDD ⎠ 2010-01-20 TK5P50D RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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