TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P55DA Switching Regulator Applications 1.08±0.2 10.0 Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 V (Note 1) ID 3.5 Pulse (t = 1 ms) (Note 1) IDP 14 Drain power dissipation (Tc = 25°C) PD 80 W JEDEC ⎯ Single pulse avalanche energy (Note 2) EAS 121 mJ JEITA ⎯ Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current 2 1 +0.25 −0.12 2.29 2.3 ± 0.1 Characteristics 1.14MAX 0.76 ± 0.12 1.52 Absolute Maximum Ratings (Ta = 25°C) 0.58MAX 6.1 ± 0.12 +0.4 −0.6 6.6 ± 0.2 5.34 ± 0.13 0.07 ± 0.07 Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 1.01MAX • • • • Unit: mm 3 1. 2. GATE DRAIN （HEAT SINK） 3. SOURCE A TOSHIBA 2-7K1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1:Ensure that the channel temperature does not exceed 150℃. 2 1 Note 2: VDD = 90 V, Tch = 25°C(initial), L = 17.1 mH, RG = 25 Ω, IAR = 3.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2009-08-07 TK4P55DA Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 550 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 550 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.4 ⎯ 4.4 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 1.8 A ⎯ 2.0 2.45 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1.8 A 0.4 1.8 ⎯ S Input capacitance Ciss ⎯ 380 ⎯ Reverse transfer capacitance Crss ⎯ 2.5 ⎯ Output capacitance Coss ⎯ 45 ⎯ ⎯ 15 ⎯ ⎯ 35 ⎯ ⎯ 7 ⎯ ⎯ 55 ⎯ ⎯ 9 ⎯ ⎯ 5 ⎯ ⎯ 4 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton ns tf Turn-off time VOUT RL = 111 Ω 50 Ω Switching time Fall time ID = 1.8 A 10 V VGS 0V tr VDD ≈ 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd pF VDD ≈ 400 V, VGS = 10 V, ID = 3.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 3.5 A (Note 1) IDRP ⎯ ⎯ ⎯ 14 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 3.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 3.5 A, VGS = 0 V, ⎯ 800 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 4.4 ⎯ μC Marking(Note 4) TK4P55DA Part No. (or abbreviation code) Lot No. Note 4: * Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last 2digits of the calendar year) 2 2009-08-07 TK4P55DA ID – VDS 8 7.5 7.3 (A) 3.2 COMMON SOURCE Tc = 25°C PULSE TEST ID – VDS 8 10 7 DRAIN CURRENT ID DRAIN CURRENT ID (A) 4 2.4 6.5 1.6 VGS = 6 V 0.8 0 0 2 4 6 DRAIN-SOURCE VOLTAGE 8 VDS COMMONSOURCE Tc = 25°C PULSE TEST 6.4 7.5 7 3.2 6.5 1.6 VGS = 6 V 10 (V) DRAIN-SOURCE VOLTAGE VDS (V) COMMON SOURCE VDS = 20 V PULSE TEST 2.4 1.6 25 Tc = −55 °C 100 0.8 0 0 2 4 6 GATE-SOURCE VOLTAGE 10 8 VGS 20 (V) COMMON SOURCE Tc = 25℃ PULSE TEST 16 12 ID = 3.5 A 8 1.8 4 0.9 0 0 4 8 12 GATE-SOURCE VOLTAGE (V) ⎪Yfs⎪ – ID 20 16 VGS (V) RDS (ON) – ID 10 100 COMMON SOURCE VDS = 10 V PULSE TEST Tc = −55 °C 1 0.1 0.1 DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) VDS 50 VDS – VGS DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID 3.2 40 30 20 ID – VGS 4 8 4.8 0 0 10 10 25 100 DRAIN CURRENT ID 10 VGS = 10 V 1 0.1 0.1 10 1 COMMON SOURCE Tc = 25°C PULSE TEST (A) 1 DRAIN CURRENT ID 3 10 (A) 2009-08-07 TK4P55DA RDS (ON) – Tc IDR – VDS 100 3.5 4.8 1.8 ID = 0.9 A 3.2 1.6 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 5 10 3 0 −80 −40 0 40 80 CASE TEMPERATURE 120 Tc 0.1 0 160 (°C) CAPACITANCE – VDS GATE THRESHOLD VOLTAGE Vth (V) (V) 100 Coss 10 1 10 DRAIN-SOURCE VOLTAGE 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 −80 100 VDS 3 (V) −40 VDS (V) DRAIN-SOURCE VOLTAGE 80 60 40 20 CASE TEMPERATURE 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 100 80 40 CASE TEMPERATURE PD – Tc 40 0 120 Tc 160 (°C) 500 20 VDS 400 VDD = 100 V 300 12 400 200 8 COMMON SOURCE VGS 100 0 0 4 8 TOTAL GATE CHARGE 4 16 200 ID = 3.5 A Tc = 25°C PULSE TEST 4 0 16 12 Qg (V) 1 0.1 4 VGS (pF) COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C C CAPACITANCE VDS Vth – Tc Crss DRAIN POWER DISSIPATION PD (W) −1.5 −1.2 5 Ciss 0 0 −0.9 −0.6 DRAIN-SOURCE VOLTAGE 10000 1000 VGS = 0 V 1 −0.3 GATE-SOURCE VOLTAGE 6.4 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON-RESISTANCE RDS (ON) ( Ω) 8 (nC) 2009-08-07 TK4P55DA NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 PDM 0.1 0.1 0.05 t SINGLE PULSE T 0.02 Duty = t/T Rth (ch-c) = 1.56 °C/W 0.01 0.01 10μ 100μ 1m 10m PULSE WIDTH 100m 1 tw (s) SAFE OPERATING AREA EAS – Tch 100 150 100 μs * ID (A) ID max (continuous) 1 ms * DC operation Tc = 25°C 0.1 PULSE Tc = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1 10 90 60 30 0 25 *: SINGLE NONREPETITIVE 0.01 120 50 100 DRAIN-SOURCE VOLTAGE 15 V 1000 VDS 75 100 125 150 CHANNEL TEMPEATURE (INITIAL) Tch(°C) VDSS max DRAIN CURRENT 1 AVALANCHE ENERGY EAS (mJ) ID max (pulsed) * 10 0.001 10 (V) BVDSS IAR 0V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 17.1 mH 5 VDS WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ − 2 V DD ⎠ ⎝ VDSS 2009-08-07 TK4P55DA RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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