SFT502/G and SFT504/G Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 5 AMP, 200 Volts NPN HIGH SPEED POWER TRANSISTOR Part Number / Ordering Information 1/ SFT502/ SFT504/ __ __ __ 2/ __ = No Screening │ │ └ Screening TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ │ └ Polarity __ = Normal │ R = Reverse │ └ Package G = CERPACK 3/ Features: BVCEO 150 V Minimum Fast Switching High Frequency, 50 MHz Typical High Linear Gain (SFT504G) Low Saturation Voltage and Leakage 200oC Operating Temperature Gold Eutectic Die Attach TX, TXV, S-Level Screening Available Designed for Complementary Use with SFT501/G and SFT503/G Symbol Max Units Collector – Base Voltage VCBO 200 Volts Collector – Emitter Voltage VCEO 150 Volts Emitter – Base Voltage Maximum Ratings VEBO 7.0 Volts Continuous Collector Current IC 5.0 Amps Base Current IB 1.0 Amps TJ & TSTG -65 to +200 ºC PD 10 0.10 W W/ºC R0JC 2.4 ºC/W Operating & Storage Temperature Total Power Dissipation @ TC = 100ºC Derate above 100ºC Thermal Resistance (Junction to Case) CERPACK (G) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0078C DOC SFT502/G and SFT504/G Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 3/ Symbol Min Max Units Collector – Emitter Breakdown Voltage IC = 50 mA BVCEO 150 - Volts Collector – Base Breakdown Voltage IC = 200 μA BVCBO 200 - Volts Emitter – Base Breakdown Voltage IE = 200 µA BVEBO 7 - Volts Collector Cutoff Current VCB = 100 V ICBO - 500 nA Collector Cutoff Current VCE = 100 V ICEO - 1 µA VEB = 6 V IEBO - 500 nA 20 30 20 50 50 40 - Emitter Cutoff Current DC Current Gain* VCE = 5 V SFT502 IC = 50 mA IC = 2.5 A IC = 5.0 A IC = 50 mA IC = 2.5 A IC = 5 A SFT504 Collector-Emitter Saturation Voltage* HFE IC = 2.5 A, IB = 250 mA IC = 5.0 A, IB = 500 mA VCE (SAT) - 0.75 1.5 V Base-Emitter Saturation Voltage* IC = 2.5 A, IB = 250 mA IC = 5.0 A, IB = 500 mA VBE (SAT) - 1.3 1.5 V Current Gain Bandwidth Product* IC = 500 mA, VCE = 5 V, f = 10 MHz fT 70 - MHz Output Capacitance VCB = 10 V, IE = 0 A, f = 1.0MHz Cob - 225 pF Input Capacitance VCB = 10 V, IC = 0 A, f = 1.0MHz Cib - 900 pF VCC = 50 V IC = 5 A IB1 = IB2 = 500 mA td tr ts tf - 50 250 1200 300 ns ns ns ns Delay Time Rise Time Storage Time Fall Time CASE OUTLINE: CERPACK NOTES: *Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. PIN ASSIGNMENT CODE R NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. FUNCTION Normal Reverse BASE Collector Collector DATA SHEET #: TR0078C PIN 1 Emitter Base PIN 2 Base Emitter DOC