SUU06N10-225L New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ b TC = 25_C TC = 125_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TA = 25_C Operating Junction and Storage Temperature Range V 6.5 ID 3.75 IDM 8.0 IS 6.5 IAR 5.0 EAR 1.25 A mJ 20b TC = 25_C Maximum Power Dissipation Unit PD W 1.5a TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Junction-to-Ambienta Junction-to-Case Steady State RthJA RthJC Typical Maximum 40 50 80 100 6.0 7.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71254 S-01584—Rev. A, 17-Jul-00 www.vishay.com 1 SUU06N10-225L New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125_C 50 VDS = 80 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V 3.0 8.0 nA mA m A 0.160 0.200 VGS = 10 V, ID = 3 A, TJ = 125_C 0.350 VGS = 10 V, ID = 3 A, TJ = 175_C 0.450 VGS = 4.5 V, ID = 1.0 A 0.180 VDS = 15 V, ID = 3 A 8.5 W 0.225 S Dynamica Input Capacitance Ciss 240 VGS = 0 V, VDS = 25 V, F = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 17 Total Gate Chargec Qg 2.7 Gate-Source Chargec Qgs VDS = 50 V, VGS = 5 V, ID = 6.5 A 42 pF 4.0 0.6 nC Gate-Drain Chargec Qgd 0.7 Turn-On Delay Timec td(on) 7 11 8 12 8 12 9 14 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDD = 50 V, RL = 7.5 W ID ^ 6.5 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 8.0 A Voltageb VSD IF = 6.5 A, VGS = 0 V 0.9 1.3 V Source-Drain Reverse Recovery Time trr IF = 6.5 A, di/dt = 100 A/ms 35 60 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71254 S-01584—Rev. A, 17-Jul-00 SUU06N10-225L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 15 15 TC = –55_C VGS = 10 thru 5 V 25_C 12 9 I D – Drain Current (A) I D – Drain Current (A) 12 4V 6 3 9 125_C 6 3 3, 2 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 Transconductance 4 5 On-Resistance vs. Drain Current 0.30 TC = –55_C 0.25 r DS(on)– On-Resistance ( W ) 12 25_C 9 125_C 6 3 0 VGS = 4.5 V 0.20 VGS = 10 V 0.15 0.10 0.05 0.00 0 3 6 9 12 0 15 3 6 ID – Drain Current (A) 9 12 15 4 5 ID – Drain Current (A) Capacitance Gate Charge 10 350 V GS – Gate-to-Source Voltage (V) 300 C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 15 g fs – Transconductance (S) 1 Ciss 250 200 150 100 Coss 50 Crss 0 VDS = 50 V ID = 6.5 A 8 6 4 2 0 0 20 40 60 80 VDS – Drain-to-Source Voltage (V) Document Number: 71254 S-01584—Rev. A, 17-Jul-00 100 0 1 2 3 Qg – Total Gate Charge (nC) www.vishay.com 3 SUU06N10-225L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 10 2.0 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 3 A 1.5 1.0 TJ = 175_C TJ = 25_C 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 8 10 10 ms Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 6 4 2 100 ms 1 1 ms 10 ms TC = 25_C Single Pulse 100 ms 1 s, dc 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71254 S-01584—Rev. A, 17-Jul-00