ETC SUU06N10-225L

SUU06N10-225L
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
ID (A)
0.200 @ VGS = 10 V
6.5
0.225 @ VGS = 4.5 V
6.0
TO-251
D
G
and DRAIN-TAB
G D S
Top View
S
Order Number:
SUU06N10-225L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)
_ b
TC = 25_C
TC = 125_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
TA = 25_C
Operating Junction and Storage Temperature Range
V
6.5
ID
3.75
IDM
8.0
IS
6.5
IAR
5.0
EAR
1.25
A
mJ
20b
TC = 25_C
Maximum Power Dissipation
Unit
PD
W
1.5a
TJ, Tstg
_C
–55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
Junction-to-Ambienta
Junction-to-Case
Steady State
RthJA
RthJC
Typical
Maximum
40
50
80
100
6.0
7.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71254
S-01584—Rev. A, 17-Jul-00
www.vishay.com
1
SUU06N10-225L
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 80 V, VGS = 0 V
1
VDS = 80 V, VGS = 0 V, TJ = 125_C
50
VDS = 80 V, VGS = 0 V, TJ = 175_C
250
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 3 A
Drain-Source On-State Resistanceb
Forward Transconductanceb
rDS(on)
gfs
V
3.0
8.0
nA
mA
m
A
0.160
0.200
VGS = 10 V, ID = 3 A, TJ = 125_C
0.350
VGS = 10 V, ID = 3 A, TJ = 175_C
0.450
VGS = 4.5 V, ID = 1.0 A
0.180
VDS = 15 V, ID = 3 A
8.5
W
0.225
S
Dynamica
Input Capacitance
Ciss
240
VGS = 0 V, VDS = 25 V, F = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
17
Total Gate Chargec
Qg
2.7
Gate-Source
Chargec
Qgs
VDS = 50 V, VGS = 5 V, ID = 6.5 A
42
pF
4.0
0.6
nC
Gate-Drain Chargec
Qgd
0.7
Turn-On Delay Timec
td(on)
7
11
8
12
8
12
9
14
Rise
Timec
tr
Turn-Off Delay Timec
Fall Timec
td(off)
VDD = 50 V, RL = 7.5 W
ID ^ 6.5 A, VGEN = 10 V, RG = 2.5 W
tf
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
8.0
A
Voltageb
VSD
IF = 6.5 A, VGS = 0 V
0.9
1.3
V
Source-Drain Reverse Recovery Time
trr
IF = 6.5 A, di/dt = 100 A/ms
35
60
ns
Diode Forward
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71254
S-01584—Rev. A, 17-Jul-00
SUU06N10-225L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
15
15
TC = –55_C
VGS = 10 thru 5 V
25_C
12
9
I D – Drain Current (A)
I D – Drain Current (A)
12
4V
6
3
9
125_C
6
3
3, 2 V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
2
Transconductance
4
5
On-Resistance vs. Drain Current
0.30
TC = –55_C
0.25
r DS(on)– On-Resistance ( W )
12
25_C
9
125_C
6
3
0
VGS = 4.5 V
0.20
VGS = 10 V
0.15
0.10
0.05
0.00
0
3
6
9
12
0
15
3
6
ID – Drain Current (A)
9
12
15
4
5
ID – Drain Current (A)
Capacitance
Gate Charge
10
350
V GS – Gate-to-Source Voltage (V)
300
C – Capacitance (pF)
3
VGS – Gate-to-Source Voltage (V)
15
g fs – Transconductance (S)
1
Ciss
250
200
150
100
Coss
50
Crss
0
VDS = 50 V
ID = 6.5 A
8
6
4
2
0
0
20
40
60
80
VDS – Drain-to-Source Voltage (V)
Document Number: 71254
S-01584—Rev. A, 17-Jul-00
100
0
1
2
3
Qg – Total Gate Charge (nC)
www.vishay.com
3
SUU06N10-225L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
10
2.0
I S – Source Current (A)
r DS(on)– On-Resistance ( W )
(Normalized)
VGS = 10 V
ID = 3 A
1.5
1.0
TJ = 175_C
TJ = 25_C
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
TJ – Junction Temperature (_C)
0.2
0.4
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
8
10
10 ms
Limited by rDS(on)
I D – Drain Current (A)
I D – Drain Current (A)
6
4
2
100 ms
1
1 ms
10 ms
TC = 25_C
Single Pulse
100 ms
1 s, dc
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
10
100
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 71254
S-01584—Rev. A, 17-Jul-00