TC2996A REV1_20070503 1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 1.6 GHz • 13 dB Typical Linear Power Gain at 1.6 GHz PHOTO ENLARGEMENT • High Linearity:IP3 = 50 dBm Typical • High Power Added Efficiency:Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 30 mm • 100 % DC and RF Tested • Flange Ceramic Package DESCRIPTION The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5, IDS = 2.5A @ 1.6GHz ) Symbol CONDITIONS MIN TYP MAX UNIT 39.5 41 dBm 12 13 dB P1dB Output Power at 1dB Gain Compression Point GL Linear Power Gain IP3 Intercept Point of the 3rd-order Intermodulation, *PSCL = 28 dBm 50 dBm PAE Power Added Efficiency at 1dB Compression Power 40 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 7.5 A gm Transconductance at VDS = 2 V, VGS = 0 V 5400 mS VP Pinch-off Voltage at VDS = 2 V, ID = 60 mA -1.7 Volts 22 Volts 1.5 °C/W BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2996A REV1_20070503 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 35 dBm 60 W 175 °C - 65 °C to +175 °C HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (in mm) Gate Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2996A REV1_20070503 EVALUATION BOARD PCB Material: FR4 1206 +10.5 V Ci6, 10 uF Ci5, 0.1uF ER = 4.6 -Vg 1206 0805 Ci4, 1000 pF Co6, 10 uF R1, 10 ohm Thickness = 31 mil Co5, 0.1uF T04-093_1.4ohm @1.6GHz Unit: mil Co4, 1000 pF Co2, 3.9 pF Ci2, 3.9 pF Ci3, 0.75 pF RF in Co1, 3.9 pF Ci1, 3 pF Part Type Resistor Reference Designator R1 Description 10 ohm, 0805 Manufacturer Capacitor Ci1 3 pF, 0603 Murata Capacitor Ci2 3.9 pF, 0603 Murata Capacitor Ci3 0.75 pF, 0603 Murata Capacitor Ci4 1000 pF, 0603 Murata Capacitor Ci5 0.1 uF, 0603 Murata Capacitor Ci6 10 uF, 1206 Murata Capacitor Co1 3.9 pF, 0603 Murata Capacitor Co2 3.9 pF, 0603 Murata Capacitor Co3 2 pF, 0603 Murata Capacitor Co4 1000 pF, 0603 Murata Capacitor Co5 0.1 uF, 0603 Murata Capacitor Co6 10 uF, 1206 Murata RF out 0805 Co3, 2 pF TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3