ISC 2SB1368

Inchange Semiconductor
Product Specification
2SB1368
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD2060
・Low collector saturation voltage:
VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A
・Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
・With general purpose applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
导体
半
电
固
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
D
N
O
IC
R
O
T
UC
M
E
S
E
VALUE
UNIT
Open emitter
-80
V
Collector-emitter voltage
Open base
-80
V
Emitter-base voltage
Open collector
-5
V
-4
A
-0.4
A
G
N
A
INCH
Collector-base voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
CONDITIONS
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1368
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.3A
-1.0
-1.7
V
VBE
Base-emitter on voltage
IC=-3A;VCE=-5V
-1.0
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-30
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
15
fT
COB
‹
体
半导
CONDITIONS
Transition frequency
IC=-0.5A ; VCE=-5V
Collector output capacitance
f=1MHz;VCB=10V
固电
R
40-80
O
IN
70-140
Y
120-240
2
TYP.
MAX
-80
UNIT
V
240
R
O
T
UC
OND
IC
M
E
ES
G
N
A
CH
hFE-1 Classifications
MIN
9.0
MHz
130
pF
Inchange Semiconductor
Product Specification
2SB1368
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SB1368
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4