Inchange Semiconductor Product Specification 2SB1368 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2060 ・Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・With general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base 导体 半 电 固 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER D N O IC R O T UC M E S E VALUE UNIT Open emitter -80 V Collector-emitter voltage Open base -80 V Emitter-base voltage Open collector -5 V -4 A -0.4 A G N A INCH Collector-base voltage IC Collector current IB Base current PC Collector dissipation CONDITIONS Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1368 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.0 -1.7 V VBE Base-emitter on voltage IC=-3A;VCE=-5V -1.0 -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -30 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 15 fT COB 体 半导 CONDITIONS Transition frequency IC=-0.5A ; VCE=-5V Collector output capacitance f=1MHz;VCB=10V 固电 R 40-80 O IN 70-140 Y 120-240 2 TYP. MAX -80 UNIT V 240 R O T UC OND IC M E ES G N A CH hFE-1 Classifications MIN 9.0 MHz 130 pF Inchange Semiconductor Product Specification 2SB1368 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1368 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4