Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V 3 A 0.5 A IC Collector current IB Base current PC Collector dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 100 hFE-2 DC current gain IC=2A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V 3 MHz Collector output capacitance f=1MHz;VCB=10V 35 pF fT COB CONDITIONS 2 MIN TYP. MAX 60 UNIT V 320 Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3