Inchange Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2058 ・Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・With general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base 导体 半 电 固 Fig.1 simplified outline (TO-220F) and symbol D N O IC Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER R O T UC M E S GE VALUE UNIT Open emitter -60 V Collector-emitter voltage Open base -60 V Emitter-base voltage Open collector -7 V -3 A -0.5 A N A H C Collector-base voltage IN IC Collector current IB Base current PC Collector dissipation CONDITIONS Ta=25℃ 2.0 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-0.5A;VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V Collector output capacitance f=1MHz;VCB=-10V fT COB 体 半导 固电 Switching times CONDITIONS ton Turn-on time ts Storage time tf Fall time IC=-2.0A IB1=-IB2=-0.2A VCC=-30V ,RL=15Ω hFE-1 Classifications O Y 60-120 100-200 2 TYP. MAX -60 UNIT V 200 9.0 R O T UC D N O IC M E S GE N A H INC MIN MHz 150 pF 0.4 μs 1.7 μs 0.5 μs Inchange Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4