Inchange Semiconductor Product Specification 2SA1658 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V -3 A -0.3 A 15 W IC Collector current IB Base current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1658 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -0.3 -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -0.75 -1.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 70 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 40 pF fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz CONDITIONS B Y 70-140 120-240 2 TYP. MAX -30 B hFE-1 Classifications O MIN UNIT V 240 Inchange Semiconductor Product Specification 2SA1658 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3