ISC 2SA1658

Inchange Semiconductor
Product Specification
2SA1658
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4369
·Good linearity of hFE
APPLICATIONS
·For general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-5
V
-3
A
-0.3
A
15
W
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1658
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-0.3
-0.8
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-2V
-0.75
-1.0
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
70
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
25
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
40
pF
fT
Transition frequency
IC=-0.5A ; VCE=-2V
100
MHz
‹
CONDITIONS
B
Y
70-140
120-240
2
TYP.
MAX
-30
B
hFE-1 Classifications
O
MIN
UNIT
V
240
Inchange Semiconductor
Product Specification
2SA1658
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3