Inchange Semiconductor Product Specification 2SA1195 Silicon PNP Power Transistors DESCRIPTION ·With TO-202 package ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A IB Base current -0.5 A PC Collector power dissipation B Ta=25℃ 2 W TC=25℃ 15 Tj Junction temperature 175 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1195 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-500mA ;IB=-50m A -1.0 V VBE Base-emitter on voltage IC=-5mA ; VCE=-5V -0.7 V hFE-1 DC current gain IC=-200mA ; VCE=-5V 60 hFE-2 DC current gain IC=-500mA ; VCE=-5V 40 ICBO Collector cut-off current VCB=-150V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -1 μA COB Output capacitance IE=0; VCB=-10V;f=1MHz 35 pF fT Transition frequency IE=-100mA ; VCB=-5V CONDITIONS hFE classifications R O 60-120 100-200 2 MIN TYP. MAX 160 15 UNIT V 200 50 MHz Inchange Semiconductor Product Specification 2SA1195 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3