ISC 2SA1195

Inchange Semiconductor
Product Specification
2SA1195
Silicon PNP Power Transistors
DESCRIPTION
·With TO-202 package
·High power dissipation
·Complement to type 2SC2483
APPLICATIONS
·For high voltage and general
purpose amplification
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-1.5
A
IB
Base current
-0.5
A
PC
Collector power dissipation
B
Ta=25℃
2
W
TC=25℃
15
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1195
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA ;IB=-50m A
-1.0
V
VBE
Base-emitter on voltage
IC=-5mA ; VCE=-5V
-0.7
V
hFE-1
DC current gain
IC=-200mA ; VCE=-5V
60
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
40
ICBO
Collector cut-off current
VCB=-150V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-1
μA
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
35
pF
fT
Transition frequency
IE=-100mA ; VCB=-5V
‹
CONDITIONS
hFE classifications
R
O
60-120
100-200
2
MIN
TYP.
MAX
160
15
UNIT
V
200
50
MHz
Inchange Semiconductor
Product Specification
2SA1195
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3