JMNIC 2SD1585

Product Specification
www.jmnic.com
2SD1585
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・VCEO≥60V;VEBO≥7V;IC(DC)≤3.0A
・Complement to type 2SB1094
APPLICATIONS
・For use in audio frequency power
amplifier and general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
VALUE
UNIT
VCBO
Collector-base voltage
PARAMETER
Open emitter
CONDITIONS
60
V
VCEO
Collector -emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-Peak
5
A
IB
Base current
0.6
A
PC
Collector power dissipation
Ta=25℃
2.0
W
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
2SD1585
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO
Collector-emitter voltage
IC=30mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A IB=0.2A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=2A IB=0.2A
2.0
V
ICBO
Collector cut-off current
VCB=60V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
10
μA
hFE-1
DC current gain
IC=50mA ; VCE=5V
20
hFE-2
DC current gain
IC=0.5A ; VCE=5V
40
Transition frequency
IC=0.1A; VCE=5V
16
MHz
Collector output capacitance
f=1MHz ; VCB=10V
48
pF
fT
COB
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
JMnic
60
UNIT
V
200
Product Specification
www.jmnic.com
2SD1585
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic