Product Specification www.jmnic.com 2SD1585 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・VCEO≥60V;VEBO≥7V;IC(DC)≤3.0A ・Complement to type 2SB1094 APPLICATIONS ・For use in audio frequency power amplifier and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VALUE UNIT VCBO Collector-base voltage PARAMETER Open emitter CONDITIONS 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 5 A IB Base current 0.6 A PC Collector power dissipation Ta=25℃ 2.0 W TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD1585 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter voltage IC=30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A 1.5 V VBEsat Base-emitter saturation voltage IC=2A IB=0.2A 2.0 V ICBO Collector cut-off current VCB=60V; IE=0 10 μA IEBO Emitter cut-off current VEB=7V; IC=0 10 μA hFE-1 DC current gain IC=50mA ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 40 Transition frequency IC=0.1A; VCE=5V 16 MHz Collector output capacitance f=1MHz ; VCB=10V 48 pF fT COB hFE-2 Classifications M L K 40-80 60-120 100-200 JMnic 60 UNIT V 200 Product Specification www.jmnic.com 2SD1585 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic