HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. • 5.3A, 1200V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49316. Ordering Information PART NUMBER • 1200V Switching SOA Capability • Typical EOFF . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.fairchildsemi.com • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging PACKAGE BRAND HGTD1N120BNS TO-252AA 1N120B HGTP1N120BN TO-220AB 1N120BN JEDEC TO-220AB E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A C G COLLECTOR (FLANGE) Symbol C JEDEC TO-252AA G COLLECTOR (FLANGE) G E E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B HGTD1N120BNS, HGTP1N120BN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC ALL TYPES 1200 UNITS V 5.3 2.7 6 ±20 ±30 6A at 1200V 60 0.476 10 -55 to 150 A A A V V W W/oC mJ oC oC 300 260 8 13 oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V - - 250 µA - 20 - µA - - 1.0 mA - 2.5 2.9 V - 3.8 4.3 V 6.0 7.1 - V VGE = ±20V - - ±250 nA 6 - - A - 9.2 - V VGE = 15V - 14 20 nC VGE = 20V - 15 21 nC Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES VCE = 1200V IC = 1.0A VGE = 15V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC IC = 50µA, VCE = VGE Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 1.0A, VCE = 600V On-State Gate Charge ©2001 Fairchild Semiconductor Corporation QG(ON) IC = 1.0A VCE = 600V HGTD1N120BNS, HGTP1N120BN Rev. B HGTD1N120BNS, HGTP1N120BN Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 960V VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) MIN TYP MAX UNITS - 15 20 ns - 11 14 ns - 67 76 ns - 226 300 ns - 70 - µJ Turn-On Energy (Note 5) EON1 Turn-On Energy (Note 5) EON2 - 172 187 µJ Turn-Off Energy (Note 4) EOFF - 90 123 µJ Current Turn-On Delay Time td(ON)I - 13 17 ns - 11 15 ns - 75 88 ns - 258 370 ns - 145 - µJ Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 150oC ICE = 1.0 A VCE = 960V VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) Turn-On Energy (Note 5) EON1 Turn-On Energy (Note 5) EON2 - 385 440 µJ Turn-Off Energy (Note 4) EOFF - 120 175 µJ Thermal Resistance Junction To Case RθJC - - 2.1 oC/W NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. (Unless Otherwise Specified) ICE , DC COLLECTOR CURRENT (A) 6 VGE = 15V 5 4 3 2 1 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 7 TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTD1N120BNS, HGTP1N120BN Rev. B HGTD1N120BNS, HGTP1N120BN 200 TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V TC = 75oC, VGE = 15V IDEAL DIODE 100 10 TC 75oC 75oC 110oC 110oC VGE 15V 13V 15V 13V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 2.1oC/W, SEE NOTES 5 0.5 1.0 2.0 20 18 18 tSC 16 16 14 12 12 10 13 3.0 TC = -55oC TC = 150oC 2 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 13V 0 2 6 4 8 10 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) TC = 25oC 1 6 5 TC = 25oC 4 TC = -55oC 3 1 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 15V 0 2 EOFF , TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V 600 400 TJ = 25oC, VGE = 13V TJ = 25oC, VGE = 15V 1 1.5 2 2.5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 8 10 250 RG = 82Ω, L = 4mH, VCE = 960V 0 0.5 6 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1200 200 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 800 TC = 150oC 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1000 10 15 14.5 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 6 3 14 13.5 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 4 14 ISC ICE, COLLECTOR TO EMITTER CURRENT (A) 5 20 VCE = 840V, RG = 82Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 300 (Unless Otherwise Specified) (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves 3 RG = 82Ω, L = 4mH, VCE = 960V 200 TJ = 150oC, VGE = 13V OR 15V 150 TJ = 25oC, VGE = 13V OR 15V 100 50 0 0.5 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTD1N120BNS, HGTP1N120BN Rev. B HGTD1N120BNS, HGTP1N120BN Typical Performance Curves (Unless Otherwise Specified) (Continued) 28 RG = 82Ω, L = 4mH, VCE = 960V RG = 82Ω, L = 4mH, VCE = 960V 24 20 16 TJ trI , RISE TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) 24 VGE 25oC 150oC 13V 13V 25oC 15V 150oC 15V 12 1 1.5 2 2.5 16 12 TJ = 25oC, TJ = 150oC, VGE = 15V 8 4 0.5 8 0 TJ = 25oC, TJ = 150oC, VGE = 13V 20 3 FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V 64 TJ = 25oC, VGE = 13V 60 56 0.5 1 1.5 280 200 160 2 2.5 120 0.5 3 TJ = 25oC, VGE = 13V OR 15V 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 15 18 DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250µs 16 14 VGE , GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC, VGE = 13V OR 15V 240 ICE , COLLECTOR TO EMITTER CURRENT (A) TC = -55oC 12 10 8 TC = 25oC 6 TC = 150oC 4 2 0 3 320 76 68 2.5 RG = 82Ω, L = 4mH, VCE = 960V TJ = 150oC, VGE = 15V 72 2 360 RG = 82Ω, L = 4mH, VCE = 960V 80 1.5 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 84 1 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) VCE = 800V 12 9 6 3 IG(REF) = 1mA, RL = 600Ω, TC = 25oC 0 7 8 9 10 11 12 13 14 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 15 VCE = 1200V VCE = 400V 0 4 8 12 16 20 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTD1N120BNS, HGTP1N120BN Rev. B HGTD1N120BNS, HGTP1N120BN (Unless Otherwise Specified) (Continued) 350 FREQUENCY = 1MHz C, CAPACITANCE (pF) 300 CIES 250 200 150 100 COES 50 CRES 0 0 5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 6 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = 110oC 5 VGE = 15V 4 3 VGE = 10V 2 1 0 0 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE VGE = 12V FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2.0 1.0 0.5 0.2 0.1 0.1 t1 0.05 PD 0.02 t2 0.01 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 0.005 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms VGE 90% RHRD4120 10% EON2 L = 4mH EOFF RG = 82Ω ICE ICE 90% + - VCE 10% VDD = 960V tfI td(ON)I trI td(OFF)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 19. SWITCHING TEST WAVEFORMS HGTD1N120BNS, HGTP1N120BN Rev. B HGTD1N120BNS, HGTP1N120BN Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTD1N120BNS, HGTP1N120BN Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4