HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description • 13A, 1200V, TC = 25°C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. • 1200V Switching SOA Capability • Typical Fall Time 360ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Avalanche Rated • Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.fairchildsemi.com Formerly Developmental Type TA49313 • Related Literature • TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Informations Part Number Package Brand HGTP2N120CN TO-220AB 2N120CN HGT1S2N120CN TO-262 2N120CN Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A. E COLLECTOR (FLANGE) C C E G C G G COLLECTOR (FLANGE) TO-220 TO-262 E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,598,461 4,605,948 4,620,211 4,631,564 4,682,195 4,684,413 4,694,313 4,717,679 4,803,533 4,809,045 4,809,047 4,810,665 4,888,627 4,890,143 4,901,127 4,904,609 ©2005 Fairchild Semiconductor Corporation HGTP2N120CN, HGT1S2N120CN Rev. C 4,443,931 4,466,176 1 4,516,143 4,532,534 4,587,713 4,639,754 4,639,762 4,641,162 4,644,637 4,743,952 4,783,690 4,794,432 4,801,986 4,823,176 4,837,606 4,860,080 4,883,767 4,933,740 4,963,951 4,969,027 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT March 2005 Symbol TC = 25°C, Unless Otherwise Specified Parameter BVCES Collector to Emitter Voltage IC25 IC110 Collector Current Continuous At TC = 25°C At TC = 110°C HGTP2N120CN HGT1S2N120CN Units 1200 V 13 7 A A ICM Collector Current Pulsed (Note 1) 20 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching SOA Operating Area at TJ = 150°C (Figure 2) PD Power Dissipation Total at TC = 25°C 104 W Power Dissipation Derating TC > 25°C 0.83 W/°C EAV Forward Voltage Avalanche Energy (Note 2) tJ, TSTG Operating and Storage Junction Temperature Range TL TPKG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, see Tech Brief 334 tSC Short Circuit Withstand Time (Note 3) at VGE = 15V 13A at 1200V 18 mJ -55 to 150 °C 300 260 °C °C 8 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Notes: 1. Pulse width limited by maximum junction temperature. 2. ICE = 3A, L = 4mH 3. VCE(PK) = 840V, TJ = 125°C, RG = 51Ω. Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. - BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0V 1200 BVECS Emitter to Collector Breakdown Voltage IC = 10mA, VGE = 0V ICES Collector to Emitter Leakage Current VCE = 1200V VCE(SAT) Collector to Emitter Saturation Voltage IC = 2.6A, VGE = 15V Max. Units - V 15 - - V TJ = 25°C - - 100 µA TJ = 125°C - 100 - µA TJ = 150°C - - 1.0 mA TJ = 25°C - 2.05 2.40 V TJ = 150°C - 2.75 3.50 V 6.4 6.7 - V - - ±250 nA 13 - - A VGE(TH) Gate to Emitter Threshold Voltage IC = 45µA, VCE = VGE IGES Gate to Emitter Leakage Current VGE = ±20V SSOA Switching SOA TJ = 150°C, RG = 51Ω, VGE = 15V L = 5mH, VCE(PK) = 1200V VGEP Gate to Emitter Plateau Voltage IC = 2.6A, VCE = 600V - 10.2 - V Qg(ON) On-State Gate Charge IC = 2.6A, VCE = 600V VGE = 15V - 30 36 nC VGE = 20V - 36 43 nC HGTP2N120CN, HGT1S2N120CN Rev. C 2 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted (Continued) Parameter td(ON)l Current Trun-On Delay Time trl Current Rise Time td(OFF)l Curent Turn-Off Delay Time tfl Current Fall Time EON1 Turn-On Energy (Note 4) EON2 Turn-On Energy (Note 4) EOFF Turn-Off Energy (Note 5) td(ON)l Curent Turn-On Delay Time Test Conditions IGBT and Diode at TJ = 25°C ICE = 2.6A VCE = 960V VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 18) IGBT and Diode at TJ = 150°C ICE = 2.6A VCE = 960V VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 18) Min. Typ. Max. Units - 25 30 ns - 11 15 ns - 205 220 ns - 260 320 ns - 96 - µJ - 425 590 µJ - 355 390 µJ - 21 25 ns trl Current Rise Time td(OFF)l Curent Turn-Off Delay Time tfl Current Fall Time EON1 Turn-On Energy (Note 4) EON2 Turn-On Energy (Note 4) EOFF Turn-Off Energy (Note 5) RθJC Thermal Resistance Junction to Case - - 11 15 ns - 225 240 ns - 360 420 ns - 96 - µJ - 800 1100 µJ - 530 580 µJ - 1.20 °C/W Notes: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. HGTP2N120CN, HGT1S2N120CN Rev. C 3 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Electrical Characteristics Figure 2. Minimum Switching Safe Operating Area ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 1. DC Collector Current vs Case Temperature VGE = 15V 12 10 8 6 4 2 0 25 50 75 100 125 150 16 TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH 14 12 10 8 6 4 2 0 0 o TC , CASE TEMPERATURE ( C) TC = 75oC,VGE = 15V IDEAL DIODE TC VGE 75oC 15V 75oC 12V 50 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.2oC/W, SEE NOTES 10 1 TC VGE 110oC 15V o 110 C 12V 2 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) TC = 25oC 6 TC = -55oC 4 TC = 150oC 2 DUTY CYCLE <0.5%, VGE = 12V 250µS PULSE TEST 2 3 4 5 6 1400 50 VCE = 840V, RG = 51Ω, TJ = 125oC 40 40 30 30 20 20 ISC tSC 10 0 10 10 11 12 13 14 15 0 10 DUTY CYCLE <0.5%, VGE = 15V 250µs PULSE TEST 8 TC = -55oC TC = 25oC 6 TC = 150oC 4 2 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) HGTP2N120CN, HGT1S2N120CN Rev. C 1200 Figure 6. Collector to Emitter On-State Voltage 8 1 1000 VGE , GATE TO EMITTER VOLTAGE (V) 10 0 800 50 5 Figure 5. Collector to Emitter On-State Voltage 0 600 Figure 4. Short Circuit Withstand Time tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH 100 400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Operating Frequency vs Collector to Emitter Currentl 200 200 ISC , PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 14 4 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Typical Performance Characteristics (Continued) Figure 7. Turn-On Energy Loss vs Collector to Emitter Current Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current 900 RG = 51Ω, L = 5mH, VCE = 960V 1500 EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 2000 TJ = 150oC, VGE = 12V, VGE = 15V 1000 500 TJ = 25oC, VGE = 12V, VGE = 15V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 RG = 51Ω, L = 5mH, VCE = 960V 800 700 TJ = 150oC, VGE = 12V OR 15V 600 500 400 TJ = 25oC, VGE = 12V OR 15V 300 200 100 1.0 5.0 1.5 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 9. Turn_On Delay Time vs Collector to Emitter Current 3.0 3.5 4.0 4.5 5.0 40 RG = 51Ω, L = 5mH, VCE = 960V 35 40 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 2.5 Figure 10. Turn-On Rise Time vs Collector to Emitter Current 45 35 30 TJ = 25oC, TJ = 150oC, VGE = 12V 25 20 1.5 2.0 2.5 3.0 3.5 4.0 4.5 30 RG = 51Ω, L = 5mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 12V 25 20 15 10 TJ = 25oC, TJ = 150oC, VGE = 15V 5 TJ = 25oC, TJ = 150oC, VGE = 15V 15 1.0 0 1.0 5.0 ICE , COLLECTOR TO EMITTER CURRENT (A) 1.5 2.0 2.5 3.5 4.0 4.5 5.0 Figure 12. Fall Time vs Collector to Emitter Current 700 400 RG = 51Ω, L = 5mH, VCE = 960V RG = 51Ω, L = 5mH, VCE = 960V 600 350 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 150oC 300 250 200 150 500 TJ = 150oC, VGE = 12V OR 15V 400 300 200 VGE = 12V, VGE = 15V, TJ = 25oC 100 1.0 3.0 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 11. Turn-Off Delay Time vs Collector to Emitter Current td(OFF)I , TURN-OFF DELAY TIME (ns) 2.0 ICE , COLLECTOR TO EMITTER CURRENT (A) 1.5 2.0 2.5 3.0 TJ = 25oC, VGE = 12V OR 15V 3.5 4.0 4.5 100 1.0 5.0 ICE , COLLECTOR TO EMITTER CURRENT (A) HGTP2N120CN, HGT1S2N120CN Rev. C 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Typical Performance Characteristics (Continued) Figure 14. Gate Charage Waveforms 16 40 VGE, GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 13. Transfer Characteristic DUTY CYCLE <0.5%, VCE = 20V 250µS PULSE TEST 35 30 25 20 15 TC = -55oC 10 o TC = 25 C 5 0 7 8 TC = 150oC 9 10 11 13 14 15 VCE = 1200V 12 10 8 VCE = 400V VCE = 800V 6 4 2 0 12 IG(REF) = 1mA, RL = 260Ω, TC = 25oC 14 0 5 2.0 C, CAPACITANCE (nF) FREQUENCY = 1MHz 1.5 CIES 1.0 0 COES CRES 0 5 10 15 20 20 15 25 30 Figure 16. Collector to Emitter On-Sate Voltage ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 15. Capacitance vs Collector to Emitter 0.5 10 QG, GATE CHARGE (nC) VGE , GATE TO EMITTER VOLTAGE (V) 25 5 DUTY CYCLE <0.5%, TC = 110oC 250µs PULSE TEST 4 VGE = 15V 3 VGE = 10V 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE Figure 17. Normalized Transient Thermal Response, Junction to Case 100 0.5 0.2 0.1 10-1 t1 0.05 PD 0.02 0.01 10-2 10-5 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) HGTP2N120CN, HGT1S2N120CN Rev. C 6 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Typical Performance Characteristics (Continued) Figure 18. Inductive Switching Test Circuit Figure 19. Switching Test Waveforms RHRD4120 90% 10% VGE L = 5mH EON2 EOFF RG = 51Ω VCE 90% + - VDD = 960V ICE 10% td(OFF)I tfI trI td(ON)I HGTP2N120CN, HGT1S2N120CN Rev. C 7 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Test Circuit and Waveforms Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x V CE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required, an external Zener is recommended. HGTP2N120CN, HGT1S2N120CN Rev. C 8 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Handling Precautions for IGBTs The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 9 HGTP2N120CN, HGT1S2N120CN Rev. C www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT TRADEMARKS