Inchange Semiconductor Product Specification 2SD2151 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector to emitter saturation voltage ・Large collector current IC APPLICATIONS ・For power switching applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 130 V Collector-emitter voltage Open base 80 V Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A PC Collector power dissipation TC=25℃ 30 W Ta=25℃ 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2151 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA, IB=0 VCEsat-1 Collector-emitter saturation voltage IC=6A; IB=0.3A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=1A 1.5 V VBE sat-1 Base-emitter saturation voltage IC=6A; IB=0.3A 1.5 V VBE sat-2 Base-emitter saturation voltage IC=10A; IB=1A 2.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 hFE-2 hFE-3 fT CONDITIONS MIN TYP. MAX 80 V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=0.1A ; VCE=2V 45 DC current gain IC=3A ; VCE=2V 90 DC current gain IC=6A ; VCE=2V 30 Transition frequency IC=0.5A ; VCE=10V;f=1MHz UNIT 260 20 MHz 0.5 μs 2.0 μs 0.2 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=6A ;IB1=-IB2=0.6A VCC=50V hFE-2 Classifications Q P 90-180 130-260 2 Inchange Semiconductor Product Specification 2SD2151 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3