ISC 2SB1230

Inchange Semiconductor
Product Specification
2SB1230
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・Wide area of safe operation
・Complement to type 2SD1840
・Low collector saturation voltage
APPLICATIONS
・Motor drivers,relay drivers,converters
and other general high-current switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
导体
半
电
固
SYMBOL
VCBO
VCEO
VEBO
M
E
S
GE
PARAMETER
N
A
H
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
R
O
T
UC
D
N
O
IC
Absolute maximum ratings(Tc=25℃)
VALUE
UNIT
-110
V
-100
V
-6
V
IC
Collector current
-15
A
ICM
Collector current -peak
-25
A
IB
Base current
-5
A
PC
Collector power dissipation
Ta=25℃
3.0
W
TC=25℃
100
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1230
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA;RBE=∞
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-110
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A
-0.8
V
VBE sat
Base-emitter saturation voltage
IC=-6A; IB=-0.6A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE-1
hFE-2
‹
CONDITIONS
导体
半
电
固
DC current gain
IC=-1.5A ; VCE=-2V
DC current gain
IC=-6A ; VCE=-2V
P
50-100
M
E
S
GE
Q
70-140
2
TYP.
MAX
R
O
T
UC
50
D
N
O
IC
N
A
H
INC
hFE-1 Classifications
MIN
20
140
UNIT
Inchange Semiconductor
Product Specification
2SB1230
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions
3