Inchange Semiconductor Product Specification 2SB1230 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector R O T UC D N O IC Absolute maximum ratings(Tc=25℃) VALUE UNIT -110 V -100 V -6 V IC Collector current -15 A ICM Collector current -peak -25 A IB Base current -5 A PC Collector power dissipation Ta=25℃ 3.0 W TC=25℃ 100 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1230 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA;RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -110 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -0.8 V VBE sat Base-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 hFE-2 CONDITIONS 导体 半 电 固 DC current gain IC=-1.5A ; VCE=-2V DC current gain IC=-6A ; VCE=-2V P 50-100 M E S GE Q 70-140 2 TYP. MAX R O T UC 50 D N O IC N A H INC hFE-1 Classifications MIN 20 140 UNIT Inchange Semiconductor Product Specification 2SB1230 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3