Inchange Semiconductor Product Specification 2SC3088 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO≥800V) ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·500V/4A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V 4 A 8 A 1.5 A IC Collector current ICP Collector current-peak IB Base current PC Collector power dissipation PW≤300μs, Duty Cycle≤10% Ta=25℃ 2.5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3088 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.3A ; VCE=5V 15 hFE -2 DC current gain IC=1.5A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 40 pF fT Transition frequency IC=0.3A ; VCE=10V 18 MHz 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=2A ;IB1=-IB2=0.4 A RL=100Ω,VCC=200V hFE-1 classifications L M N 15-30 20-40 30-50 2 1.0 μs 3.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3088 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3