isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3942 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for color TV chroma output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 300 V 300 V 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak 0.2 A Collector Power Dissipation @ TC=25℃ 10 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3942 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 300 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 300 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 30mA ; VCE= 10V 1.2 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 10 μA hFE DC Current Gain fT COB w isc Website：www.iscsemi.cn n c . i m e s c s .i ww Current-Gain—Bandwidth Product Output Capacitance B IC= 5mA; VCE= 50V 50 IC= 20mA; VCE= 30V 70 IE= 0; VCB= 30V, ftest= 1MHz 2 250 MHz 2.7 pF