isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS ·Designed for power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -100 V -100 V -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -10 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 40 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1343 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1343 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A ; VCE= -3V COB Output Capacitance fT CONDITIONS B w w isc Website：www.iscsemi.cn TYP. B n c . i m e s c s i . w Current-Gain—Bandwidth Product MIN 1000 MAX UNIT 20000 IE= 0; VCB= -10V; ftest= 1MHz 90 pF IE= 0.5A; VCE= -5V; ftest= 10MHz 12 MHz 2