BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110°° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BU806 : BU807 400 330 V V : BU806 : BU807 200 150 V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 8 A 15 A ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 2 A 60 W Junction Temperature 150 °C Storage Temperature - 55 ~150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO (sus) ICES ICEV Parameter * Collector-Emitter Sustaining Voltage : BU806 : BU807 Test Condition IC = 100mA, IB = 0 Min. Max. 200 150 Units V V Collector Cut-off Current : BU806 : BU807 VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 100 100 µA µA Collector Cut-off Current : BU806 : BU807 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V 100 100 µA µA IEBO Emitter Cut-off Current VBE = 6V, IC = 0 3 mA VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 50mA 1.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 50mA 2.4 V VF * Damper Diode Forward Voltage IF = 4A 2 V * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics hFE, DC CURRENT GAIN 1000 V CE = 5V 100 V CE = 1.5V 10 0.1 1 10 10 Ic = 100 IB VBE(sat) 1 V CE(sat) 0.1 0.1 IC[A], COLLECTOR CURRENT 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 IC MAX. (Pulse) 1ms 500 10 10us us s IC MAX. (DC) DC 1 100 m 10 IC[A], COLLECTOR CURRENT 10 Vf[V], FORWARD VOLTAGE 1 100us 1 0.1 BU806 0.1 0.1 1 10 0.01 0.01 BU807 0.1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Damper Diode Figure 4. Safe Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E