isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.35V(Max)@ IC=6A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) ·Complement to Type 2SA1567 APPLICATIONS ·Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w VALUE UNIT w w 50 V 50 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 35 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg n c . i m e Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4064 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.35 V ICBO Collector Cutoff Current VCB=50V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 6A ; VCE= 1V Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V fT COB CONDITIONS Switching times w w ton Turn-on Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP. IC= 6A ; IB1= -IB2= 0.12A RL= 4Ω;VCC= 24V 2 UNIT V 50 n c . i m e IE= 0 ; VCB= 12V;ftest= 1.0MHz MAX 50 B s c s i . w Output Capacitance MIN 40 MHz 180 pF 0.6 μs 1.4 μs 0.4 μs isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4064 s c s i . w n c . i m e w w isc Website：www.iscsemi.cn