isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·DC Current Gain: hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3852 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz 0.8 μs 3.0 μs 1.2 μs fT CONDITIONS MIN TYP. MAX 60 UNIT V 200 Switching Times ton Turn-On Time tstg Storage Time tf IC= 1A; IB1= 15mA; IB2= -30mA; VCC= 20V; RL= 20Ω Fall Time isc Website：www.iscsemi.cn 2