isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to Type 2SB1258 APPLICATIONS ·Driver for solenoid, relay and motor, series regulator, and general purpose applications. s c s i . w ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL w w PARAMETER VALUE UNIT 120 V 120 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg n c . i m e Storage Temperature Range isc Website：www.iscsemi.cn 2SD1785 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1785 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 3mA 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT w w ton Turn-on Time tstg Storage Time Fall Time isc Website：www.iscsemi.cn MIN TYP. IC= 3A; IB1= -IB2= 3mA; VCC= 30V; RL= 10Ω 2 UNIT V 2000 n c . i m e IE= 0.1A; VCE= 12V MAX 120 B s c s i . w Current-Gain—Bandwidth Product Switching times tf CONDITIONS 70 pF 100 MHz 0.5 μs 5.5 μs 1.5 μs