isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2168 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2168 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 0.7A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 15 MHz 1.0 μs 3.0 μs 1.5 μs fT CONDITIONS MIN TYP. MAX 200 UNIT V 60 Switching Times ton Turn-On Time tstg Storage Time tf IC= 1A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20Ω Fall Time isc Website：www.iscsemi.cn 2