isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w n c . i m e w w VALUE UNIT 150 V 150 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V ICBO Collector Cutoff Current VCB= 150V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 0.7A ; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT w w ton Turn-On Time tstg Storage Time IE= -0.2A ; VCE= 12V IC= 1A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20Ω Fall Time isc Website：www.iscsemi.cn MIN 2 TYP. MAX 150 UNIT V 60 n c . i m e s c s i . w Current-Gain—Bandwidth Product Switching Times tf CONDITIONS 35 pF 15 MHz 1.0 μs 3.0 μs 1.5 μs