Transistors IC SMD Type Silicon Transistor 2SA1226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Low output capacitance 0.55 High gain bandwidth product +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low noise 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5.0 V Collector-base voltage (RBE = ) Collector current - continuous IC -30 mA PT 200 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Total power dissipation at 25 ambient temperature Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -40V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4.0V , IC = 0 -0.1 ìA hFE VCE = -10V , IC = -1.0mA DC current gain Testconditons Min 40 VCE(sat) IC = -10mA , IB = -1.0mA Collector-emitter saturation voltage Base-emitter vVoltage Gain bandwidth product VBE VCE = -10V, IC = -10mA fT VCE = -10V , IE = 1.0mA Typ 90 180 -0.09 -0.3 -0.67 -0.72 250 V 400 Output capacitance Cob VCB = -10V , IE = 0 , f = 1.0MHz 1.1 Noise figure NF VCE = -10V, IC = -1.0mA, RG = 500Ù, f = 1.0MHz 3.5 V MHz 2.0 pF dB hFE Classification Marking E2 E3 E4 hFE 40 80 60 120 90 180 www.kexin.com.cn 1