Transistors SMD Type Silicon PNP Epitaxial Type 2SA1312 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 0.4 3 Features 1 Low noise. 0.55 High hFE. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Small package. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 A Base current IB -20 A Collector dissipation PC 150 W Jumction temperature Tj 125 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -120V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -5V , IC = 0 -0.1 ìA hFE VCE = -6V , IC = -2mA DC current Gain Collector-emitter saturation voltage Testconditons Min Typ 200 700 VCE(sat) IC = -10mA , IB =-1mA Gain bandwidth product fT Output capacitance Noise figure VCE = -6V , IC = -1mA -0.3 100 V MHz Cob VCB = -10V , f = 1MHz NF VCE =-6 V, IC=-0.1 mA, f=100 Hz,Rg=10 KÙ 0.5 6 dB NF VCE =-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 KÙ 0.2 3 dB 4 pF hFE Classification Marking ABG ABL Rank GR BL hFE 200 400 350 700 www.kexin.com.cn 1