Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance. 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4 V Collector current (DC) IC 20 mA Total power dissipation PT 150 mW Tj 125 Tstg -55 to +125 Junction temperature Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Collector cutoff current ICBO VCB = 25V, IE=0 Emitter cutoff current IEBO VEB = 3.0V, IC=0 DC current gain hFE VCE = 6.0V , IC = 1mA VBE IC = 10mA , IB = 1.0mA 0.72 VCE(sat) IC = 10mA , IB = 1.0mA 0.1 Base-emitter voltage Collector-emitter saturation voltage Gain bandwidth product fT Output capacitance VCE = 6.0V , IE = -1.0mA Cob Collector to base time constant Cc-rb'b Noise figure NF 40 400 90 Max Unit 100 nA 100 nA 180 V 0.3 V 600 MHz VCB = 6.0V , IE = 0 , f = 1.0MHz 1.0 pF VCE = 6.0V, IE = -1.0mA, f = 31.9MHz 12 ps VCE = 6.0V, IE = -1.0mA, RG = 50Ù, f = 100MHz 3 dB hFE Classification Marking F12 F13 F14 hFE 40 80 60 120 90 180 www.kexin.com.cn 1