KEXIN 2SC2223

Transistors
IC
SMD Type
NPN Silicon Epitaxial Transistor
2SC2223
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High gain bandwidth product fT=600MHz TYP
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Cob=1.0PF TYP
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low output capacitance.
0.55
Micro package.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
4
V
Collector current (DC)
IC
20
mA
Total power dissipation
PT
150
mW
Tj
125
Tstg
-55 to +125
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Collector cutoff current
ICBO
VCB = 25V, IE=0
Emitter cutoff current
IEBO
VEB = 3.0V, IC=0
DC current gain
hFE
VCE = 6.0V , IC = 1mA
VBE
IC = 10mA , IB = 1.0mA
0.72
VCE(sat) IC = 10mA , IB = 1.0mA
0.1
Base-emitter voltage
Collector-emitter saturation voltage
Gain bandwidth product
fT
Output capacitance
VCE = 6.0V , IE = -1.0mA
Cob
Collector to base time constant
Cc-rb'b
Noise figure
NF
40
400
90
Max
Unit
100
nA
100
nA
180
V
0.3
V
600
MHz
VCB = 6.0V , IE = 0 , f = 1.0MHz
1.0
pF
VCE = 6.0V, IE = -1.0mA, f = 31.9MHz
12
ps
VCE = 6.0V, IE = -1.0mA, RG = 50Ù,
f = 100MHz
3
dB
hFE Classification
Marking
F12
F13
F14
hFE
40 80
60 120
90 180
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