Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1687 Features Very small-sized package. High VEBO. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -15 V Collector current IC -150 A Collector current ICP -300 A Base current IB -30 mA Collector dissipation PC 150 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SA1687 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit -0.1 ìA -0.1 ìA Collector cutoff current IcBO VCB = -40V , IE = 0 Emitter cutoff current IEBO VEB = -120V , IC = 0 DC current Gain hFE VCE = -6V , IC = -1mA fT VCE = -6V , IC = -1mA 130 Collector-to-emitter saturation voltage VCE(sat) IC = -50mA , IB =-5mA -0.25 -0.5 V Base-to-emitter saturation voltage VBE(sat) IC = -50mA , IB =-5mA -0.85 -1.2 V Gain bandwidth product 135 600 MHz V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -15 V Collector-to-base breakdown voltage Common base output capacitance VCB = -6V , f = 1MHz Cob 3.5 pF Delay time ton 50 ns Storage time tstg 460 ns tf 60 ns Fall time hFE Classification D Marking 2 Min Rank 5 6 7 hFE 60 120 90 180 135 270 www.kexin.com.cn