KEXIN 2SC4306

Transistors
SMD Type
High-Current Switching Applications
2SC4306
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
+0.15
4.60-0.15
0.127
max
3 .8 0
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
Large current capacity.
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Fast switching speed.
+0.15
5.55 -0.15
Low saturation voltage.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
8
A
Collector current (pulse)
ICP
12
A
Base current
IB
1.5
A
Collector dissipation
Tc=25
PC
1
W
PC
15
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SC4306
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 20V, IE=0
1
ìA
Emitter cutoff current
IEBO
VEB = 4V, IC=0
1
ìA
DC current gain
hFE
Gain bandwidth product
Output capacitance
VCE = 2V , IC = 500mA
100
VCE = 2V , IC = 6A
70
400
fT
VCE = 2V , IC = 500mA
250
MHz
Cob
VCB = 10V , f = 1.0MHz
60
pF
Collector-emitter saturation voltage
VCE(sat) IC = 5A , IB = 250mA
220
400
mV
Base-emitter saturation voltage
VBE(sat) IC = 5A , IB = 250mA
1
1.3
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
20
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
Turn-on time
ton
30
300
ns
Storage time
tstg
250
1000
ns
tf
15
150
ns
Fall time
hFE Classification
2
Min
Rank
R
S
T
hFE
100 200
140 280
200 400
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