Transistors SMD Type High-Voltage Switching Applications 2SC4135 TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High breakdown voltage and large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Fast switching speed. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Collector current (pulse) ICP 3 A Collector dissipation PC 1 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4135 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 100V, IE=0 Emitter cutoff current IEBO VEB = 4V, IC=0 DC current gain hFE VCE =5V , IC = 100mA Gain bandwidth product Output capacitance fT VCE = 10V , IC = 100mA Cob VCB = 10V , f = 1.0MHz Typ 100 Max Unit 100 nA 100 nA 400 120 MHz 16 pF Collector-emitter saturation voltage VCE(sat) IC = 1A , IB = 100mA 0.13 0.4 V Base-emitter saturation voltage VBE(sat) IC = 1A , IB = 100mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 120 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 100 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V Turn-on time ton 80 ns Storage time tstg 1000 ns tf 50 ns Fall time hFE Classification 2 Min Rank R S T hFE 100 200 140 280 200 400 www.kexin.com.cn