VRF3933 VRF3933(MP) 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. S S G FEATURES • Improved Ruggedness V(BR)DSS = 250V • 3:1 Load VSWR Capability at Specified Operating Conditions • 300W with 22dB Typ. Gain @ 30MHz, 100V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • Improved Replacement for SD3933 • Available in Matched Pairs • Thermally Enhanced Package • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF3933 Unit 250 V Continuous Drain Current @ TC = 25°C 20 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 648 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature Max °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 250 260 VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.7 Max 4.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 2.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 2.0 μA gfs Forward Transconductance (VDS = 10V, ID = 10A) 8 12 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.27 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4969 Rev A 6 -2013 Thermal Characteristics Dynamic Characteristics Symbol VRF3933(MP) Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 850 Coss Output Capacitance VDS = 50V 300 Crss Reverse Transfer Capacitance f = 1MHz 30 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 300W ηD f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 300W ψ f1 = 30MHz, VDD =100V, IDQ = 250mA, Pout = 300W Min Typ 23 26 Max Unit dB 50 % No Degradation in Output Power 3:1 VSWR - All Phase Angles 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 40 40 17V 10V 7V 35 6V 25 20 5.5V 15 5V 10 4.5V 5 4V 0 0 V 5 10 15 20 25 3.5V 30 TJ= -55°C 30 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 250µs PULSE TEST<0.5 % DUTY CYCLE 35 TJ= 125°C 20 15 10 5 0 35 TJ= 25°C 25 0 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 10,000 .1 120 100 s m 1 m 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage BVdss Line ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) 050-4969 Rev A 6 -2013 50 s 0 m Crss IDMax 0 10 100 s m Coss 10 s 10 Ciss 1,000 10 Rds(on) 1 PD Max TJ = 125°C TC = 75°C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area VRF3933(MP) D = 0.9 0.25 0.20 0.7 0.15 0.5 0.10 0.3 0.05 Note: t2 t1 = Pulse Duration 0.1 t 0.05 0 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10-5 t1 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 10-4 10-3 10 -1 10-2 1.0 10 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration TJ (°C) TC (°C) 0.0202 0.0507 0.00647F 0.02043F 0.1199 0.0792 0.2421F 7.962F FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL Freq=30MHz 56 600 28 500 27 400 48 46 60 22 27 32 50 Po W 300 40 30 25 200 24 100 23 0 37 10 0 17 PIN, (dBm) Figure 6. POUT and Gain vs PIN 22 27 32 37 PIN, (dBm) Figure 7. Eff and POUT vs. PIN Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin Zout 2 21 - j 8.5 14.1 - j 0.6 13.5 4.5 - j 6.5 12.9 - j 4 27.1 2.9 - j 3.1 9.7 - j 6.6 40.7 2.5 - j 2 7.6 - j 7 65 2.4 - j 2.07 4.5 - j 6.6 ZIN - Gate shunted with 25Ω Idq = 250mA ZOL - Conjugate of optimum load for 300 Watts output at Vdd=50V 050-4969 Rev A 6 -2013 70 20 Gain 17 Pout (W) 26 50 Gain (dB) 52 44 80 Freq=30MHz OutEff 54 Pout (dBrn) 29 Pout Efficiency (%) 58 VRF3933(MP) 30 MHz Test Circuit 30 MHz Test Circuit 100V R1 Vbias R2 + C3 C4 RF Input C10 R3 L1 T1 C2 C1 L2 + C12 C11 T2 Output C8 VRF3933 C6 C1 1200pF ATC100B ceramic C2, C3 0.1uF 50V 1206 SMT C9-C11 .047uF NPO 150V 1218 SMT C6 100 pF metal clad mica C7 ARCO 462 mica trimmer C8 15 pF ATC 100E ceramic C4, C12 10uF 100V Electrolytic L1 23 nH - 2t #18 0.2"d .2"l 050-4969 Rev A 6 -2013 L3 C9 C7 L2 62 nH - 3t #12 0.31"dia L3 2t #16 on 2x 267300081 .5" bead R1-R2 1k Ω 1/4W R3 100 Ω 1W T1 9:1 transforner 3t #24 teflon on RF Parts Co. T1/2 transformer core T2 4:1 transformer 2t 3-ply #16 teflon on RF Parts Co. T1 transformer core VRF3933(MP) Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A 2.900 - 2.975 M 3.650 - 3.725 B 2.975 - 3.050 N 3.725 - 3.800 C 3.050 - 3.125 P 3.800 - 3.875 D 3.125 - 3.200 R 3.875 - 3.950 E 3.200 - 3.275 S 3.950 - 4.025 F 3.275 - 3.350 T 4.025 - 4.100 G 3.350 - 3.425 W 4.100 - 4.175 H 3.425 - 3.500 X 4.175 - 4.250 J 3.500 - 3.575 Y 4.250 - 4.325 K 3.575 - 3.650 Z 4.325 - 4.400 VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%. M177 (0.63 dia. SOE) Mechanical Data All dimensions are ±.005 A 4 1 B .135 r 5 2 PIN 1 - DRAIN PIN 2 - GATE PIN 3 - SOURCE PIN 4 - SOURCE PIN 5 - SOURCE OK 3 C D F DIM MIN TYP MAX A 0.225 0.230 0.235 B 0.265 0.270 0.275 C 0.860 0.865 0.870 D 1.130 1.135 1.140 E 0.545 0.550 0.555 F 0.003 0.005 0.007 G 0.098 0.103 0.108 H 0.150 0.160 0.170 J 1.080 1.100 1.120 K 0.625 0.630 0.635 I E H G 0.280 I Seating Plane HAZARDOUS MATERIAL WARNING: The ceramic portion of the device below the lead plane is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. BeO substrate weight: 0.703g. Percentage of total module weight which is BeO: 9%. 050-4969 Rev A 6 -2013 .125d nom J VRF3933(MP) 050-4969 Rev A 6 -2013 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp