Inchange Semiconductor Product Specification 2SC1678 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 65 V VCEO Collector-emitter voltage Open base 65 V VEBO Emitter-base voltage Open collector 4 V 3 A IC Collector current IB Base current 0.4 A IE Emitter current -3 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1678 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 1.0 V VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=50m A V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 65 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 65 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 4 V ICBO Collector cut-off current VCB=30V;IE=0 10 μA ICEO Collector cut-off current VCE=20V;IB=0 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 15 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 COB Collectpr output capacitance IE=0 ; VCB=10V, f=1MHz Transition frequency IC=0.1A ; VCE=5V fT 2 30 100 pF MHz Inchange Semiconductor Product Specification 2SC1678 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3