ISC 2SB755

Inchange Semiconductor
Product Specification
2SB755
Silicon PNP Power Transistors
・
DESCRIPTION
・With MT-200 package
・Complement to type 2SD845
・High transition frequency
・High breakdown voltage :VCEO=-150V(min)
APPLICATIONS
・For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
导体
半
电
固
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-base voltage
CONDITIONS
VALUE
UNIT
Open emitter
-150
V
Open base
-150
V
-5
V
M
E
S
GE
N
A
H
INC
Collector-emitter voltage
Emitter-base voltage
R
O
T
UC
D
N
O
IC
Absolute maximum ratings (Ta=25℃)
Open collector
IC
Collector current
-12
A
IB
Base current
-1.2
A
PC
Collectorl power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB755
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1A; IB=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-5 A;IB=-0.5 A
-2.0
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE
DC current gain
IC=-1A ; VCE=-5V
VCEsat
fT
COB
‹
CONDITIONS
导体
半
电
Transition frequency
固
Output capacitance
R
55-110
N
A
H
INC
O
80-160
2
MAX
UNIT
160
20
MHz
450
pF
R
O
T
UC
D
N
O
IC
IE=0; VCB=-10V;f=1MHz
TYP.
55
IC=-1A ; VCE=-10V
M
E
S
GE
hFE classifications
MIN
Inchange Semiconductor
Product Specification
2SB755
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3