TRIQUINT AGR26045EF

AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26045EF is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications,
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
Figure 1. AGR26045EF (flanged) Package
Features
Typical performance for MMDS systems.
f = 2600 MHz, IDQ = 430 mA, Vds = 28 V, adjacent
channel BW = 3.84 MHz, 5 MHz offset; alternate
channel BW = 3.84 MHz, 10 MHz offset. Typical
P/A ratio of 9.8 dB at 0.01% (probability) CCDF*:
— Output power: 6.5 W.
— Power gain: 13 dB.
— Efficiency: 20% .
— ACPR: –34 dBc.
— ACLR1: –36 dBc.
— Return loss: –15 dB.
Typical pulsed P1dB, 6 µs pulse at 10% duty: 47 W.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 45 W continuous wave (CW) output power.
Large signal impedance parameters available.
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case
Sym
Rı JC
Value
1.5
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value
Drain-source Voltage
VDSS
65
Gate-source Voltage
VGS –0.5, +15
Total Dissipation at TC = 25 °C PD
117
Derate Above 25 °C
—
0.67
Operating Junction TemperaTJ
200
ture
Storage Temperature Range TSTG –65, +150
Unit
Vdc
Vdc
W
W/°C
°C
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR26045EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
Max
V(BR)DSS
65
—
—
IDSS
—
Unit
Off Characteristics
= 50
200µA
µA)
Drain-source Breakdown Voltage (VGS = 0, ID =
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
—
Vdc
—
—
2
75
5
µAdc
—
S
µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.5 A)
GFS
—
3.2
VGS(Q)
—
3.8
Gate Threshold Voltage (VDS = 10 V, ID = 150 µA)
VGS(TH)
Drain-source On-voltage (VGS = 10 V, ID = 0.5 A)
VDS(ON)
Gate Quiescent Voltage (VDS = 28 V, ID = 430 mA)
—
—
—
4.8
Vdc
0.22
—
Vdc
—
Vdc
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
—
1.0
—
pF
—
13
—
dB
—
–38
—
dBc
ACPR
—
–40
—
dBc
IRL
—
–15
—
dB
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2655.0 MHz. CW)
Output Mismatch Stress
(VDD = 28 V, POUT = 45 W (CW), IDQ = 430 mA, fC = 2655.0 MHz
VSWR = 10:1; [all phase angles])
GPS
η
IM3
P1dB
ψ
—
43
21
—
—
—
%
W
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2645 MHz, and f2 = 2655 MHz. VDD = 28 Vdc, IDQ = 430 mA, and
POUT = 6.5 W avg.
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR26045EF
FB1
VGG
R1
+
C4
C2
C3
Z1
RF INPUT
Z2 C1
Z7
Z3
Z8
Z4
VDD
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z5
Z6
2
DUT
C13
+
Z10
1
Z9
C6
C7
Z11
3
C8
C9
C5
C10
Z12
C13
RF OUTPUT
A. Schematic
2
3
1
Parts List:
■ Microstrip line: Z1 0.496 in. x 0.066 in.; Z2 0.235 in. x 0.066 in.; Z3 0.200 in. x 0.090 in.; Z4 0.142 in. x 0.090 in.; Z5 0.215 in. x 0.090 in.;
Z6 0.320 in. x 0.470 in.; Z7 0.410 in. x 0.050 in.; Z8 0.155 in. x 0.170 in.; Z9 0.470 in. x 0.330 in.; Z10 0.670 in. x 0.050 in.;
Z11 0.530 in. x 0.066 in.; Z12 0.670 in. x 0.066 in.
®
■ ATC chip capacitor: C1, C2, C5, C6: 4.7 pF 100B47_J500; C11: 0.1 pF 100A0R1J_500; C12: 1.5 pF 100A15JW; C13 0.3 pF 100B0R3BW.
®
■ Murata 0805 capacitor: C8: 0.1 µF.
®
■ Vitramon 1206 size capacitor C3, C7: 22000 pF.
■ 1206 size chip resistor: R1; 12 Ω.
®
■ Fair-Rite ferrite bead FB1: 2743018447.
®
■ Kemet capacitor: C4, C10: 22 µF, 35 V; C9: 0.1 µF 1206 case.
®
■ Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR26045EF Component Layout
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
U CT
8
0.6
90
IN D
0.
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
± 180
0.1
0.2
0.2
20
0.4
0.11
-100
-90
0.38
0.37
0.1
-1
06
-70
40
5
0.
0.
07
30
-1
43
0.
8
0.0
2
0.4
.41
0
0.4
0.39
F
0.12
0.13
9
0.0
0.
0
1.0
5
0.14
-80
0.36
-110
0
-12
(-j
0.
2.
1.8
1.6
0.15
0.35
0.9
1.2
1.4
0.7
0
-4
-4
4
-70
0
6
-5
5
-3
0.1
0.3
0.6
CA P
A
0.8
3
-60
5
0.3
7
-5
0.1
-60
32
CI T
IVE
T
5
,O
o)
R
0.2
-30
-65
18
CE
CO
M
EN
0.0
Z
X/
0.
0.
RE
AC
TA
N
PO
N
-85
1.
0
IN
DU
IV
CT
U
ES
0.4
31
0.
19
0.
0
-5
-25
-75
0.6
0
-20
0
44
0.8
0.48
o)
jB/ Y
E (NC
TA
EP
SC
0
1.
4.0
3.
0.3
0
-15
6
0.4
4
0.0
0
-15 -80
5.0
0.2
4
0.
-4
.45
ZS
-10
ZL
f5
0.2
8
f1
0.2
9
0.2
1
-30
0.3
8
0.
0.2
2
7
0.4
f1
0.6
f5
0.2
10
0.1
-20
D<
RD L OA
TOW A
TH S
-170
EN G
V EL
A
W
<Ð
-90
-160
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.49
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
EFL ECTI ON COEFFI CI EN T I
N
R
D
E
G
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 25 Ω
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
170
Typical Performance Characteristics
MHz (f)
2500 (f1)
2550 (f2)
2600 (f3)
2650 (f4)
2700 (f5)
ZS Ω
(complex source impedance)
13.4 – j9.0
12.8 – j9.3
12.2 – j9.5
11.6 – j9.6
11.1 – j9.7
GATE (2)
ZS
ZL Ω
(complex optimum load impedance)
7.2 – j7.1
6.7 – j7.1
6.2 – j6.5
5.7 – j5.9
5.4 – j5.4
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
60
20
GAIN
15
PAE
50
45
10
5
P1dB
40
0
35
-5
30
-10
25
-15
IRL
20
2500
2550
2600
GAIN (dB), IRL (dB) Z
POWER (dBm), PAE (%) Z
55
2650
-20
2700
FREQUENCY, MHzZ
Figure 4. CW Broadband Performance
-20
-25
IMD3 (dBc) Z
-30
300 mA
-35
-40
-45
450 mA
-50
400 mA
-55
350 mA
-60
0.1
500 mA
1
10
OUTPUT POW ER (W ) PEPZ
Test conditions:
Two-tone measurement @ 10 MHz tone spacing, VDD = 28 VDC, f1 = 2590 MHz, f2 = 2600 MHz.
Figure 5. IMD3 vs. Output Power and IDQ
100
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
dBc X
Typical Performance Characteristics (continued)
-20
45
-25
40
-30
35
-35
30
-40
25
-45
20
-50
-55
Ƨ
-60
-65
15
IM3
10
IM5
5
IM7
1
0
10
100
P OUT (W , PEP))
Test conditions:
Two-tone measurement @ 10 MHz tone spacing, VDD = 28 VDC, f1 = 2590 MHz, f2 = 2600 MHz.
Figure 6. Two-tone IMD vs. Power
0
IMD (dBc) Z
-10
IM3
-20
-30
IM5
-40
IM7
-50
-60
0.1
1
10
TONE SPACING (MHz)Z
Test conditions:
VDD = 28 V, IDQ = 430 mA, POUT = 45 W (PEP), f = 2595 MHz.
Figure 7. Two-tone IM3 vs. Tone Spacing
100
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
30
-10
25
PAE
-20
20
-30
IMD
GAIN
15
-40
10
ACP
-50
-60
0
5
5
10
15
PAE (%), GAIN (dB) Z
IMD, ACP (dBc) Z
0
0
P OUT (W )Z
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, VDD = 28 V, IDQ = 430 mA.
Figure 8. Gain, Efficiency, ACP, and IMD vs. Power
25
-5
PAE
-10
-15
-20
IRL
GAIN
15
-25
-30
10
IMD
-35
-40
-45
-50
2500
20
5
ACP
2550
2600
2650
GAIN (dB), PAE (%) Z
ACP, IMD (dBc); IRL (dB) Z
0
0
2700
FREQUENCY, MHzZ
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, POUT = 6.5 W, VDD = 28 V, IDQ = 430 mA.
Figure 9. Two-Carrier W-CDMA Broadband Performance
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
|ÍF1Î|
0
|ÍF2Î|
-5
-1 0
-1 5
-2 0
-2 5
-3 0
-3 5
|ÍIMD3Î|
|ÍIMD3Î|
|Í Î| ACP
-4 0
ACP |Í Î|
-4 5
Ce nter
2.6 G Hz
Sp an
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, POUT = 6.5 W, VDD = 28 V, IDQ = 430 mA.
Figure 10. Spectrum
50 M Hz
Preliminary Data Sheet
June 2004
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR26045EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
1
PEAK DEVICES
AAGR26045XF
GR21045F
YYWWLL
XXXXX
YYWW
LL
ZZZZZZZ
ZZZZZZZ
3
2
3
2
Label Notes:
■ M before the part number denotes model program. X before the part number denotes engineering prototype.
■
■
■
■
The last two letters of the part number denote wafer technology and package type.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.