AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Device Performance Features High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output power pulsed 4 µs at 10% duty. Large signal impedance parameters available. ESD Rating* 375D–03, STYLE 1 Figure 1. AGR19180EF (flanged) Package CDMA Features Typical two carrier CDMA performance: VDD = 28 V, IDQ = 1600 mA, POUT = 38 W, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97 CDMA pilot, sync, paging, traffic codes 8—13 (9 channels) 1.2288 MHz channel bandwidth (BW), adjacent channel power ration (ACPR) measured over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz. Distortion products measured over 1.2288 MHz channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz. Peak/avg = 9.72 dB @ 0.01% probability on CCDF: — Output power: 38 W. — Power gain: 14.5 dB. — Efficiency: 26%. — IM3: –33 dBc. — ACPR: –48.5 dBc — Return loss: –12 dB. AGR19180EF HBM MM CDM Minimum (V) 500 50 1000 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114 (HBM) and JESD22-C101 (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Symbol RθJC Value 0.35 U nit °C/W Symbol VDSS VGS PD — TJ TSTG Value 65 –0.5, 15 500 3 200 –65, 150 U nit Vdc Vdc W W/°C °C °C Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C Derate Above 25 °C Operating Junction Temperature Storage Temperature Range * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 3. dc Characteristics Parameter Symbol Off Characteristics 300 µA) V(BR)DSS Drain-source Breakdown Voltage (VGS = 0, ID = 400 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS IDSS Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics GFS Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 600 µA) VGS(TH) VGS(Q) Gate Quiescent Voltage (VDS = 28 V, ID = 2 x 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) VDS(ON) Min Typ Max Unit 65 — — — — — — 6 18 200 Vdc µAdc µAdc — — — — 12 — 3.8 0.08 — 3.0 — — S Vdc Vdc Vdc AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Electrical Characateristics (continued) Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min Typ Max Unit — 4.0 — pF CRSS Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (Part is internally matched both on input and output.) Supplied Test Fixture) Functional Tests (in (in Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain GPS — 14.5 — dB (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) η — 26 — % Drain Efficiency (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) IM3 — –33 — dBc Third-order Intermodulation Distortion* (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration bandwidth centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR — –48.5 — dBc Adjacent Channel Power Ratio* (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth centered at f1 – 885 kHz and f2 + 885 kHz, referenced to the carrier channel power) Input Return Loss IRL — –12 — dB (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Ruggedness Ψ No degradation in output (VDD = 28 V, POUT = 180 W continuous wave (CW), IDQ = 1600 mA, power. f = 1930 MHz, VSWR = 10:1 [all phase angles]) * N-CDMA, typical peak/average ratio of 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. VDD = 28 Vdc, IDQ = 2 x 800 mA, and POUT = 38 W average. . AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations R1 VGG C3 VDD FB1 R3 + R2 C4 C5 C6 C12 C7 C41 Z1 C1 Z5 Z7 Z2 2B RF INPUT Z4 C2 Z6 Z8 R4 VGS C8 Z10 FB2 R6 R5 C9 2A Z11 1A Z13 Z21 C21 Z15 Z17 3 DUT Z12 C11 C13 C14 Z18 RF OUTPUT 1B Z14 Z22 C22 Z16 Z20 VDD + C10 + C23 C24 C25 C26 C37 C27 C28 C29 Z19 Z9 Z3 + + + PINS: 1A. DRAIN 1B. DRAIN 2A. GATE 2B. GATE 3. SOURCE C30 C31 C32 C33 C38 C34 C35 C36 C42 A. Schematic R2 R3 C3 C4 C5 C6 C12 FB1 R1 C26 C23 C1 C21 C2 C22 C14 C42 C31 C32 R6 FB2 C8 R4 R5 C30 C9 C10C11 C37 C24 C25 C7 C41 C13 C27 C2 8 C2 9 C38 C33 C34 C35 C36 B. Component Layout Parts List: ? Microstrip line: Z1 0.500 in. x 0.067 in.; Z2, Z17 1.080 in. x 0.110 in.; Z3, Z16 0.210 in. x 0.067 in.; Z4, Z15 2.020 in. x 0.067 in.; Z5, Z6 0.230 in. x 0.067 in.; Z7, Z8 0.455 in. x 0.700 in.; Z9, Z10 1.100 in. x 0.035 in.; Z11, Z12 0.475 in. x 0.740 in.; Z13, Z14 0.100 in. x 0.067 in.; Z18 0.230 in. x 0.067 in.; Z19, Z20 0.490 in. x 0.050 in.; Z21, Z22 0.160 in. x 0.285 in. ® ? ATC chip capacitor: C1, C2, C21, C22: 10 pF; C7, C14, C23, C30, C41, C42: 8.2 pF; C12, C13: 1000 pF. ® ? Kemet tantalum capacitor: C27, C34: 10 µF, 35 V T491D; C4, C9, C37, C38: 1 µF, 50 V T491C. ® ? Kemet chip capacitor: C5, C10, C18, C26, C33: 0.1 µF. ® ? Sprague tantalum surface-mount chip capacitor: C3, C8, C28, C29, C35, C36: 22 µF, 35 V. ® ? Vitramon 1206 capacitor: C5, C12: 22000 pF. ? 1206 size chip resistor: R1, R4: 4.7 kΩ; R2, R5 560 kΩ, R3, R6: 1.02 kΩ. ® ? Fair-Rite ferrite bead: FB1, FB2: 2743019447. ® ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. Figure 2. Test Circuit AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor IN D 90 0.6 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 170 0. 8 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 ± 180 0.1 0.2 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) D L OA D < OW A R HST N GT -170 EL E 0.2 20 2 0.36 5 -90 0.12 0.13 0.38 0.37 0.0 IV CT DU ,O o) R -75 IN -80 0 -15 5 40 -1 06 0. 5 0. -70 -160 -85 0.48 ) / Yo (-jB CE Z X/ .0 1.8 1.6 1.4 1.2 1.0 0.9 -4 0.14 9 -110 0.11 -100 V 0 0.35 -80 (-j WA 1. 0.7 0 -4 0.15 0 -70 -5 6 4 0.8 5 -3 0.1 0.3 T 0. 07 30 -1 0.4 2 -12 0.08 0 5 -60 RE AC TA -5 3 0.3 7 0.1 VE -60 32 CA P AC I TI -65 0.2 -30 EN 0.6 0. 18 PO N 0 0 -5 -25 0. NC EC OM <Ð AN PT CE US ES 0.4 0.0 -20 31 0. 4 .4 0.6 0 3. 0.3 5 0.4 0.8 0 4.0 .04 -15 6 0 1. 8 0.4 5.0 2 0.2 9 0.2 43 0. 1 0.4 0.1 0.4 0.39 1930 (f1) 1960 (f2) 1990 (f3) ZS Ω (Complex Source Impedance) 2.58 – j5.9 2.36 – j5.26 2.37 – j4.51 19 0. MHz (f) 0 Z0 = 10 Ω f1 ZS -4 4 0. 1 -30 f3 0.2 f1 0.2 0.3 8 0. ZL -10 -90 10 0.2 0.6 f3 0.2 0 0.4 0.1 -20 .47 50 0.49 L E OF ANG 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES U CT Typical Performance Characteristics ZL Ω (Complex Optimum Load Impedance) 3.2 – j4.67 2.85 – j3.86 2.72 – j3.07 ZS = Test circuit impedance as measured from gate to gate, balanced configuration. ZL = Test circuit impedance as measured from drain to drain, balanced configuration. DRAIN (1) – + GATE (2) + – ZS ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 18 Gps, POWER GAIN (dB) 17 Idq = 2400mA Idq = 2000mA 16 Idq = 1600mA 15 Idq = 1200mA 14 Idq = 800mA 13 12 Vdd = 28V Center Frequency = 1960 MHz Two-Tone Meas urement, 100kHz Tone Spacing 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1000 Figure 4. Two-Tone Power Gain versus Output Power -10 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) Vdd = 28V Center Frequency = 1960 MHz Two-Tone Measurement, 100kHz Tone Spacing -20 -30 Idq = 800mA Idq =1200mA Idq = 2400mA -40 Idq =2000mA -50 -60 Idq =1600mA 1 10 10 0 Pout, OUTPUT POWER (WATTS) PEP 10 0 0 Figure 5. Third Order Intermodulation Distortion versus Output Power AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) -10 Vdd = 28V Idq = 1600mA Center Frequency = 1960 MHz Two-Tone Measurement, 100kHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 3rd Order -50 -60 5th Order -70 -80 7th Order -90 1 10 100 1 0 00 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Pout, OUTPUT POWER (dBm) 60 59 58 P3dB = 53.88 dBm (244.34W) 57 56 55 54 53 52 51 P1dB = 53 dBm (199.77W) 50 49 48 47 46 45 44 43 42 41 40 Vdd = 28 Vdc, Idq = 1600 mA Pulsed CW 4 msec (on), 40 msec (off) Center Frequency = 1960 MHz 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) 39 40 41 42 Figure 7. Pulsed CW Output Power versus Input Power 43 44 4 5 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) Vdd = 28 Vdc, Idq = 1600 mA f 1 = 1958.75 MHz, f2 = 1961.25 MHz 2-Carrier N-CDMA Gps, POWER GAIN (dBm), EFFICIENCY (%) 45 40 -10 IRL -20 IM3 35 -30 Efficiency 30 -40 ACPR 25 20 -50 -60 Gps 15 -70 IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. 9.72 dB Peak/Avg. Ratio @ 0.01% Probability (CCDF) Channel Spacing (Bandwidth) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz) 10 5 0 0 0 20 40 60 Pout, OUTPUT POWER (WATTS) Avg. 80 -80 -90 100 IRL, RETURN LOSS (dB), IM3 (dBc), ACPR (dBc) 50 -100 Figure 8. Two-Carrier N-CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power Vdd = 28 Vdc, Idq = 1600 mA f = 1990 MHz Bandwidth = 1.2288 MHz Channel Spacing ( Channel Bandwidth) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz) 2.25 MHz (1MHz) GPS, POWER GAIN, EFFICIENCY (%) 45 40 35 0 -10 Efficiency 2.25 MHz ( 1MHz) -20 -30 30 885 kHz (30 kHz) -40 25 1.25 MHz (12.5 kHz) -50 20 -60 Gps 15 -70 10 -80 CDMA 9 Channel Forward Pilot: 0, Paging: 1, Traffic: 8-13, Sinc: 32 5 0 0 20 40 60 Pout, OUTPUT POWER (WATTS), AVG. 80 -90 ADJACENT CHANNEL POWER RATIO (dBc) 50 -100 100 Figure 9. N-CDMA ACPR, Power Gain, Drain Efficiency versus Output Power AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. 1A PINS: 1A. DRAIN 1B. DRAIN 2A. GATE 2B. GATE 3. SOURCE 1B 3 PEAK DEVICES AGR19180EF XXXX 2A XXXX - 4 Digit Trace Code 2B