AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and communications. ) Parameter Thermal Resistance, Junction to Case: AGR26125EU AGR26125EF Sym Value Unit Rı JC Rı JC 0.5 0.5 °C/W °C/W Table 2. Absolute Maximum Ratings* AGR26125EU (unflanged) 5B 03 STYLE 1 AGR26125EF (flanged) Figure 1. Available Packages Features Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W. Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF*: — Output power: 20 W — Power gain: 11.5 dB. — Power Added Efficiency (PAE): 19%. — ACLR1: –35 dBc. — ACLR2: –37 dBc. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2600 MHz, 125 W continuous wave (CW) output power. Large signal impedance parameters available. *The test signal utilized is 4-channel W-CDMA Test Model 1. This test signal provides an equivalent reference (occupied bandwidth and waveform EPF) for the actual performance with an MMDS waveform. Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR26125EU AGR26125EF Derate Above 25 °C: AGR26125EU AGR26125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.5, +15 Vdc PD PD 350 350 W W — — TJ 2.0 2.0 200 W/°C W/°C °C TSTG –65, +150 °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR26125E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR 26125 E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Symbol M in Typ Max Unit V(BR)DSS IGSS IDSS 65 — — — — — — 4 200 12 Vdc µAdc µAdc GFS — — — — 9 — 3.8 0.08 — 4.8 — — S Vdc Vdc Vdc Symbol Min Typ Max Un i t CRSS — 3.0 — pF — 11.5 — dB IM3 — –38 — dBc Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz and f2 + 5 MHz) ACPR — –41 — dBc Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2600.0 MHz, 6 µs pulse at 10% duty) IRL P1dB — –15 — dB Off Characteristics 200 µA) Drain-source Breakdown Voltage (VGS = 0, ID = 400 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) VGS(TH) VGS(Q) VDS(ON) Table 5. RF Characteristics Parameter Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) (in Supplied Test Fixture) Functional Tests (in Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz) Input Return Loss* Output Mismatch Stress (VDD = 28 V, POUT = 125 W (CW), IDQ = 1300 mA, fC = 2600.0 MHz VSWR = 10:1; [all phase angles]) GPS η ψ — — 20 125 — % — W No degradation in output power. * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V DD = 28 Vdc, IDQ = 1300 mA, and POUT = 20 W avg. AGR 26125 E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Symbol M in Typ Max Unit V(BR)DSS IGSS IDSS 65 — — — — — — 4 12 Vdc µAdc µAdc GFS — — — — 9 — 3.8 0.08 — 4.8 — — S Vdc Vdc Vdc Symbol Min Typ Max Un i t CRSS — 3.0 — pF — 11.5 — dB IM3 — –38 — dBc Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz and f2 + 5 MHz) ACPR — –41 — dBc Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2600.0 MHz, 6 µs pulse at 10% duty) IRL P1dB — –15 — dB Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 200 µA) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) VGS(TH) VGS(Q) VDS(ON) Table 5. RF Characteristics Parameter Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Functional Tests (in Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz) Input Return Loss* Output Mismatch Stress (VDD = 28 V, POUT = 125 W (CW), IDQ = 1300 mA, fC = 2600.0 MHz VSWR = 10:1; [all phase angles]) GPS η ψ — — 20 125 — % — W No degradation in output power. * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V DD = 28 Vdc, IDQ = 1300 mA, and POUT = 20 W avg. AG R261 25E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET AGR26125E Component Layout 2 1 3 PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic Parts List: ? Microstrip Line: Z1: 0.785 in. x 0.066 in.; Z2: 0.180 in. x 0.066 in.; Z3 0.315 in. x 0.176 in.; Z4: 0.238 in. x 0.176 in.; Z5: 0.096 in. x 0.066 in.; Z6: 0.070 in. x 0.140 in.; Z7: 0.216 in. x 0.050 in.; Z8: 0.310 in. x 0.860 in.; Z9: 0.342 in. x 1.050 in.; Z10: 0.723 in. x 0.038 in.; Z11: 0.723 in. x 0.038 in.; Z12: 0.405 in. x 0.165 in.; Z13: 0.103 in. x 0.076 in.; Z14: 0.194 in. x 0.076 in.; Z15: 0.465 in. x 0.114 in.; Z16: 0.252 in. x 0.066 in. ® ? ATC chip capacitor: C1: 6.8 pF series 100B; C5, C6A, C6B, C13A, C13B, C14A, C14B, C15: 4.7 pF series 100B; C7A, C7B: 1.2 pF series 100B; C16: 0.4 pF series 100A. ® ? Murata capacitor C8A, C8B: 0.01 µF case 0805. ® ? Vitramon capacitor C3: 22000 pF case 1206 ® ? Kemet capacitor C4, C9A, C9B, C10A, C10B: 22 µF, 35V; C2, C11A, C11B, C12A, C12B: 0.1 µF case 1206. ® ? Fair-Rite ferrite bead: FB1: 2743019447. ? 1206 chip resistor: R1: 1 kΩ; R2: 560 kΩ; R3: 4.7 Ω. ? WB1, WB2: 10 mil thick, 0.6 in. x 0.18 in. ® ? Taconic RF-35 board material, 1 oz. copper, 30 mil thickness, εr = 3.5 B. Component Layout Figure 2. AGR26125E Component Layout AGR 26125 E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET U CT 0.6 90 IN D 0. 8 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 ± 180 0.1 0.2 0.2 20 0.4 IV CT IN DU 0 5 -90 0.12 0.13 0.38 0.37 0.11 -100 0.1 9 0.0 -70 -1 06 5 0. 0. 07 30 -1 0. 43 8 0.0 0.4 2 0.4 1 0.4 0.39 F 0.36 0. 2. 1.8 1.2 1.0 0.9 -4 0.14 -80 0.35 -110 0 0 -4 0.15 0.6 1.6 1.4 0.7 -70 -5 6 4 0 -12 (-j 40 Z X/ 0.1 0.3 0.8 35 5 3 -60 -5 0.3 7 VE -60 0.1 CA P AC I TI T 5 ,O o) R 0.2 -30 32 CE CO M -65 18 0. RE AC TA N EN 0. 0 -5 -25 PO N -85 1. 0 U ES 0.4 31 0. 19 0. 0. -75 0.6 0.0 0 -20 0 44 0.8 0.48 o) jB/ Y E (NC TA EP SC 0 1. 4.0 3. 0.3 0 -15 6 0.4 4 0.0 0 -15 -80 5.0 0.2 .45 0.2 8 -30 f5 -4 4 0. 0.2 9 0.2 1 0.3 ZS 0.2 2 7 0.4 8 0. f1 -10 f5 0.2 f1 0.6 ZL 10 0.1 -20 D< RD L OA TOW A TH S -170 EN G V EL A W <Ð -90 -160 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.49 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 EFL ECTI ON COEFFI CI EN T I N R D E G REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 10 Ω 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 170 Typical Performance Characteristics MHz (f) 2500 (f1) 2535 (f2) 2595 (f3) 2655 (f4) 2700 (f5) ZS Ω (complex source impedance) 18.0 – j14.9 15.7 – j15.8 12.0 – j16.0 9.0 – j15.3 7.5 – j14.6 ZL Ω (complex optimum load impedance) 2.5 – j3.7 2.3 – j3.5 2.1 – j3.2 1.9 – j2.9 1.7 – j2.7 DRAIN (6, 7) GATE (2, 3) ZS ZL SOURCE (9) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AG R261 25E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 60 15 10 GAIN 50 5 PAE 45 0 40 -5 P1dB 35 -10 30 -15 IRL 25 20 2500 2550 2600 GAIN (dB), IRL (dB)Z POWER (dBm), PAE (%)A 55 -20 -25 2700 2650 FREQUENCY, MHzA Figure 4. CW Broadband Performance -25 45 IM3 -30 40 -35 35 dBcZ -40 IM5 30 -45 25 -50 20 IM7 -55 15 -60 10 -65 5 -70 1 10 100 POUT (W, PEP)Z Test Conditions: Two-tone measurement @ 10 MHz tone spacing, VDD = 28 Vdc, F1 = 2590 MHz, F2 = 2600 MHz. Figure 5. Two-tone IMD vs. Power 0 1000 AGR 26125 E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0 -10 IMD (dBc)Z -20 IM3 -30 IM5 -40 IM7 -50 -60 0.1 1 10 100 TONE SPACING (MHz)Z Test Conditions: VDD = 28 V, IDQ = 1200 mA, POUT = 110 W (PEP), F = 2595 MHz. 0 30 -10 25 PAE -20 20 IMD -30 15 -40 GAIN ACP -50 -60 10 10 15 PAE (%), GAIN (dB)Z IMD, ACP (dBc)Z Figure 6. Two-tone IMD vs. Tone Spacing 5 20 25 30 POUT (W)Z 35 40 0 Test Conditions: Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, F1 = 2590 MHz, F2 = 2600 MHz; VDD = 28 V, IDQ = 1200 mA. Figure 7. Two-carrier W-CDMA Performance AG R261 25E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 2 4 8 10 12 14 16 18 PAE -5 ACLR1, ACLR2 (dBc)Z 6 20 22 20 18 -10 16 -15 14 -20 12 GAIN -25 10 -30 8 -35 6 -40 PAE (%), GAIN (dB)Z 0 4 ACLR1 ACLR2 -45 -50 2 0 POUT (W)Z Test Conditions: Four-carrier W-CDMA 3GPP test model 1, peak-to-average = 9.8 dB @ 0.01% CCDF, F = 2595 MHz, VDD = 28 V, IDQ = 1200 mA. Figure 8. Four-carrier W-CDMA Performance AGR 26125 E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain. AGR26125EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR26125EU 1 3 XXXX 3 2 2 AGR26125EF 1 PEAK DEVICES AGR26125EF 1 3 3 XXXX 2 XXXX = 4 DIGIT TRACE CODE PINS: 1. DRAIN 2. GATE 3. SOURCE 2