C945 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : 0.15 * Collector-base voltage V(BR)CBO : 60 * Operating and storage junction TJ,Tstg: -55OC to +150OC W (Tamb=25OC) A V temperature range SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * 1 BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.055(1.40) 0.047(1.20) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 1 3 0.118(3.00) 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) SYMBOL MIN TYP MAX UNITS Collector-base breakdown voltage(IC= 1mA, IE=0) CHARACTERISTICS V(BR)CBO 60 - - V Collector-emitter breakdown voltage(IC= 0.1mA, IB=0) V(BR)CEO 50 - - V Emitter-base breakdown voltage(IC= 0.1mA, IB=0) V(BR)EBO 5 - - V Collector cut-off current(VCB= 60V, IE=0) ICBO - - 0.1 mA Collector cut-off current(VCB= 45V, IE=0) ICEO - - 0.1 mA Emitter cut-off current(VEB= 5V, IC=0) IEBO - - 0.1 mA 130 - 400 - 40 - - - 0.3 V V DC current gain(VCE= 6V, IC= 1mA) DC current gain(VCE= 6V, IC= 0.1mA) hFE Collector-emitter saturation voltage(IC=100 mA, IB= 10mA) VCE(sat) - - Base-emitter saturation voltage(IC= 100 mA, IB= 10mA) VBE(sat) - - 1 VBEF - - 1.4 V fT 150 - - MHZ Base-emitter voltage(IE= 310 mA) Transition frequency(VCE= 6V, IC= 10mA, f= 30MHZ) CLASSIFICATION OF hFE(1) RANK L H Range 130~200 200~400 Marking Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)". CR 2007-3