RECTRON MMST5551 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.2 A * Collector-base voltage V(BR)CBO: 160 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.052(1.33) 0.050(1.27) Ratings at 25 o C ambient temperature unless otherwise specified. 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - Max. Steady State Power Dissipation PD 200 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL MIN. TYP. MAX. R θJA - - 625 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0) V(BR)CEO 160 - Vdc Collector-Base Breakdown Voltage (I C = 100µAdc, I E = 0) V(BR)CBO 180 - Vdc Emitter-Base Breakdown Voltage (I E = 10µAdc, I C = 0) OFF CHARACTERISTICS V(BR)EBO 5 - Vdc Collector Cutoff Current (V CB = 120Vdc, I E = 0) ICBO - 50 nAdc Emitter Cutoff Current (V EB = 3Vdc, I C = 0) IEBO - 50 nAdc 80 - 80 250 30 - - 0.15 - 0.2 - 1 - 1 fT 100 300 MHz Output Capacitance (V CB = 10Vdc, I E = 0, f= 1.0MHz) Cob - 6 pF Noise figure (I C = 0.2mAdc, V CE = 5Vdc, f= 1.0kHz,Rg=10 Ω) NF - 8 dB ON CHARACTERISTICS DC Current Gain (I C = 1mAdc, V CE = 5Vdc) (I C = -10mAdc, V CE = 5Vdc) hFE (I C = 50mAdc, V CE = 5Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 10Vdc, f= 100MHz) RECTRON