FDMC7660 N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2 m: Features General Description Max rDS(on) = 2.2 m: at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 3.3 m: at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Applications DC - DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching Pin 1 S S S G D D D D Bottom Top D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 33 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) TC = 25°C -Continuous (Silicon limited) ID TA = 25°C PD TJ, TSTG ±20 V 100 (Note 1a) 20 (Note 3) 200 -Pulsed A 200 Single Pulse Avalanche Energy EAS Units V 40 TC = 25°C -Continuous Ratings 30 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to + 150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7660 Device FDMC7660 ©2009 Fairchild Semiconductor Corporation FDMC7660 Rev.C1 Package Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET December 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 2.5 V 30 V 14 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.7 -6 mV/°C VGS = 10 V, ID = 20 A 1.8 2.2 VGS = 4.5 V, ID = 18 A 2.6 3.3 VGS = 10 V, ID = 20 A, TJ = 125°C 2.2 3.1 VDS = 5 V, ID = 20 A 163 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 3630 4830 pF 1345 1790 pF 110 165 pF : 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 20 A, VGS = 10 V, RGEN = 6 : 14 25 ns 6.8 14 ns ns 36 58 5.7 11 ns VGS = 0 V to 10 V 54 86 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 20 A 24 38 nC 11 nC 5.6 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 20 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 IF = 20 A, di/dt = 100 A/Ps V 45 63 ns 25 35 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTJA is determined by the user’s board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V 4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied ©2009 Fairchild Semiconductor Corporation FDMC7660 Rev.C1 2 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3.0 200 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 10 V 150 VGS = 4.5 V VGS = 4 V 100 VGS = 3.5 V 50 VGS = 3 V 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 2.5 VGS = 3 V VGS = 3.5 V 2.0 VGS = 4 V 1.5 1.0 2.0 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 15 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 ID = 20 A 5 TJ = 125oC TJ = 25 oC 0 100 125 150 2 4 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 150 VDS = 5 V TJ = 150 oC 100 TJ = 25 oC 50 TJ = -55 oC 4 10 VGS = 0 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC7660 Rev.C1 200 100 0.1 0.2 0 3 8 Figure 4. On-Resistance vs Gate to Source Voltage 200 2 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 1 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 10 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 0.5 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 ID = 20 A Ciss 8 CAPACITANCE (nF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 1 Crss f = 1 MHz VGS = 0 V 2 0.1 0 0 20 40 0.05 0.1 60 1 Figure 7. Gate Charge Characteristics 150 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 100 VGS = 4.5 V 50 o RTJC = 3 C/W 1 0.01 0.1 1 10 0 25 100 300 50 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 3 300 P(PK), PEAK TRANSIENT POWER (W) 10 100 1 ms 10 10 ms 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s RTJA = 125 oC/W 10s TA = 25 oC DC 0.01 0.01 0.1 1 10 100200 TA = 25 oC 2 10 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMC7660 Rev.C1 SINGLE PULSE RTJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W (Note 1b) 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7660 Rev.C1 5 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC7660 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMC7660 Rev.C1 6 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FlashWriter® * Power-SPM™ AccuPower™ ®* PowerTrench® FPS™ Auto-SPM™ PowerXS™ F-PFS™ Build it Now™ The Power Franchise® ® Programmable Active Droop™ FRFET® CorePLUS™ Global Power ResourceSM QFET® CorePOWER™ Green FPS™ QS™ CROSSVOLT™ TinyBoost™ Green FPS™ e-Series™ Quiet Series™ CTL™ TinyBuck™ Gmax™ RapidConfigure™ Current Transfer Logic™ TinyCalc™ GTO™ DEUXPEED® TinyLogic® Dual Cool™ IntelliMAX™ ™ TINYOPTO™ EcoSPARK® ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ TinyPower™ EfficentMax™ MegaBuck™ SignalWise™ TinyPWM™ EZSWITCH™* MICROCOUPLER™ SmartMax™ TinyWire™ ™* MicroFET™ SMART START™ TriFault Detect™ MicroPak™ SPM® TRUECURRENT™* STEALTH™ MillerDrive™ ® PSerDes™ SuperFET™ MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OPTOLOGIC® UHC® FACT Quiet Series™ OPTOPLANAR® SuperSOT™-8 ® ® Ultra FRFET™ FACT SupreMOS™ UniFET™ FAST® SyncFET™ VCX™ FastvCore™ Sync-Lock™ PDP SPM™ VisualMax™ FETBench™ XS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I45 ©2009 Fairchild Semiconductor Corporation7www.fairchildsemi.com FDMC7660 Rev.C1