Si4927DY Vishay Siliconix P-Channel 30-V (D-S) Battery Switch VDS (V) –30 rDS(on) () ID (A) 0.028 @ VGS = –10 V 7.4 0.045 @ VGS = –4.5 V 5.8 S1 S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2 P-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C) 150 C)a, b TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25C Maximum Power Dissipationa, b TA = 70C Operating Junction and Storage Temperature Range Unit V 7.4 ID 5.8 IDM 40 IS –2.1 A 2.5 PD W 1.6 TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t = 10 sec Steady State Typical Maximum 50 RthJA 75 Unit C/W Notes a. Surface Mounted on FR4 Board. b. t = 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70808 S-59519—Rev. B, 04-Sep-98 www.vishay.com FaxBack 408-970-5600 2-1 Si4927DY Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = –250 mA –1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 IDSS VDS = –24 V, VGS = 0 V –1 Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V, TJ = 55C –25 Unit Static Gate Threshold Voltage On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea ID(on) rDS(on) DS( ) VDS w –5 V, VGS = –10 V V –30 nA mA A VGS = –10 V, ID = –7.4 A 0.022 0.028 VGS = –4.5 V, ID = –5.8 A 0.034 0.045 gfs VDS = –15 V, ID = –7.4 A 15 VSD IS = –2.1 A, VGS = 0 V –0.73 –1.2 38 60 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = –15 15 V V, VGS = –10 10 V V, ID = –7.4 74A nC C 8 Gate-Drain Charge Qgd 6.8 Turn-On Delay Time td(on) 13 25 tr 9 20 75 120 42 70 50 90 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = –15 15 V V,, RL = 15 W ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W IF = –2.1 A, di/dt = 100 A/ms ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70808 S-59519—Rev. B, 04-Sep-98 Si4927DY Vishay Siliconix Output Characteristics Transfer Characteristics 40 40 VGS = 5 thru 10 V 32 I D – Drain Current (A) I D – Drain Current (A) 32 24 4V 16 8 24 16 TC = 125C 8 25C 3V 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 4000 0.16 3200 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 4 5 6 Capacitance 0.20 0.12 0.08 VGS = 4.5 V VGS = 10 V 0.04 3 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2400 Ciss 1600 Coss 800 0 Crss 0 0 8 16 24 32 40 0 6 ID – Drain Current (A) 1.6 r DS(on) – On-Resistance ( ) (Normalized) VDS = 15 V ID = 7.4 A 8 6 4 2 0 0 8 16 24 Qg – Total Gate Charge (nC) Document Number: 70808 S-59519—Rev. B, 04-Sep-98 12 18 24 30 VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) –55C 32 40 1.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.4 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4927DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 40 TJ = 150C 10 TJ = 25C 0.08 0.06 ID = 7.4 A 0.04 0.02 0 1 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.8 60 ID = 250 mA 0.6 Power (W) V GS(th) Variance (V) 45 0.4 0.2 30 0.0 15 –0.2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70808 S-59519—Rev. B, 04-Sep-98