VISHAY SI6946DQ

Si6946DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
VDS (V)
20
rDS(on) ()
ID (A)
0.080 @ VGS = 4.5 V
2.8
0.110 @ VGS = 2.5 V
2.1
D
TSSOP-8
8
D2
7
S2
3
6
S2
4
5
G2
D1
1
S1
2
S1
G1
Si6946DQ
G
Top View
S
N-Channel MOSFET
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150C)
150 C)a
TA = 25C
2.8
TA = 70C
2.3
Continuous Source Current (Diode Conduction)a
TA = 25C
IDM
20
IS
1.0
A
1.0
PD
TA = 70C
Operating Junction and Storage Temperature Range
V
ID
Pulsed Drain Current
Maximum Power Dissipationa
Unit
W
0.64
TJ, Tstg
–55 to 150
C
Symbol
Limit
Unit
RthJA
125
C/W
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70177
S-49534—Rev. E, 06-Oct-97
www.vishay.com FaxBack 408-970-5600
2-1
Si6946DQ
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
0.6
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
IDSS
VDS = 20 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V, TJ = 70C
5
Unit
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain Source On-State
On State Resistancea
Drain-Source
ID(on)
rDS(on)
DS( )
VDS = 5 V, VGS = 4.5 V
"10
VDS = 5 V, VGS = 2.5 V
"4
V
0.080
VGS = 2.5 V, ID = 2.1 A
0.110
gfs
VDS = 15 V, ID = 2.8 A
Diode Forward Voltagea
VSD
IS = 1.0 A, VGS = 0 V
mA
A
VGS = 4.5 V, ID = 2.8 A
Forward Transconductancea
nA
12
W
S
1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
16
VDS = 10 V
V, VGS = 4
4.5
5V
V, ID = 2
2.8
8A
40
nC
C
3
Gate-Drain Charge
Qgd
6
Turn-On Delay Time
td(on)
37
60
tr
66
100
56
100
57
100
26
70
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = 10 V
V,, RL = 10 W
ID ^ 1 A,
A VGEN = 4
4.5
5V
V, RG = 6 W
IF = 1.0 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70177
S-49534—Rev. E, 06-Oct-97
Si6946DQ
Vishay Siliconix
Output Characteristics
Transfer Characteristics
20
20
TC = –55C
125C
VGS = 8 thru 3 V
16
I D – Drain Current (A)
I D – Drain Current (A)
16
12
2V
8
4
25C
12
8
4
1V
0
0
0
2
4
6
8
10
0
1
VDS – Drain-to-Source Voltage (V)
2
4
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
0.20
1500
1200
0.15
C – Capacitance (pF)
r DS(on) – On-Resistance ( Ω )
3
0.10
VGS = 2.5 V
0.05
VGS = 4.5 V
900
600
Ciss
Coss
300
Crss
0
0
0
2
4
6
8
0
10
2
ID – Drain Current (A)
2.0
4
3
2
1
0
4
8
12
Qg – Total Gate Charge (nC)
Document Number: 70177
S-49534—Rev. E, 06-Oct-97
8
10
12
On-Resistance vs. Junction Temperature
VGS = 4.5 V
IDS = 2.8 A
r DS(on) – On-Resistance ( Ω )
(Normalized)
V GS – Gate-to-Source Voltage (V)
VDS = 10 V
ID = 2.8 A
0
6
VDS – Drain-to-Source Voltage (V)
Gate Charge
5
4
16
20
1.6
1.2
0.8
0.4
0
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
www.vishay.com FaxBack 408-970-5600
2-3
Si6946DQ
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
30
20
r DS(on) – On-Resistance ( Ω )
I S – Source Current (A)
0.09
TJ = 150C
10
TJ = 25C
0.08
0.07
0.06
ID = 2.8 A
0.05
0.04
1
0.00
0.25
0.50
0.75
1.00
1.25
0
1.50
VSD – Source-to-Drain Voltage (V)
2
6
8
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
1.0
4
Single Pulse Power
25
20
Power (W)
V GS(th) Variance (V)
0.5
ID = 250 µA
0.0
15
10
–0.5
5
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
TJ – Temperature (C)
0.1
1
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
4. Surface Mounted
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70177
S-49534—Rev. E, 06-Oct-97