VISHAY SI4807DY

Si4807DY
Vishay Siliconix
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
VDS (V)
rDS(ON) ()
Gate 1
–30
30
Gate 2
ID (A)
0.035 @ VGS = –10 V
6
0.054 @ VGS = –4.5 V
4.8
1.3 @ VGS = –10 V
0.9
2.2 @ VGS = –4.5 V
0.7
D
SO-8
G2
1
8
NC
G1
2
7
D
S
3
6
D
S
4
5
D
G2
G1
Top View
S
P-Channel MOSFET
Parameter
Symbol
Gate 1
Gate 2
Drain-Source Voltage
VDS
–30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)a
TA = 25C
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a
IS
TA = 25C
TA = 70C
Operating Junction and Storage Temperature Range
V
6
0.9
4.8
0.7
30
1.5
ID
TA = 70C
Maximum Power Dissipationa
Unit
A
–1.25
2.3
PD
W
1.0
TJ, Tstg
–55 to 150
C
Symbol
Limit
Unit
RthJA
55
C/W
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
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Si4807DY
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–1
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
rDS1(on)
DS1( )
VDS = 0 V, VGS = "20 V
"100
VDS = –30 V, VGS = 0 V
–1
VDS = –30 V, VGS = 0 V, TJ = 55C
–5
(G1 = G2) VDS = –5 V, VGS = –10 V
Forward
Transconductancea
Diode Forward Voltagea
–20
nA
mA
A
(G1 = G2) VGS = –10 V, ID = –6 A
0.028
0.035
(G1 = G2) VGS = –4.5 V, ID = –4.8 A
0.041
0.054
VG1S = 0 V, VG2S = –10 V, ID = –0.15 A
1.05
1.3
VG1S = 0 V, VG2S = –4.5 V, ID = –0.1 A
1.65
2.2
a
D i Source
Drain
Drain-Source
S
On-State
On
O State
S
Resistance
R i
rDS2(on)
V
gfs
VDS = –15 V, ID = –6 A
13
VSD
IS = –1.25 A, VGS = 0 V
0.7
–1.1
W
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Qg
Qgs
Qgd
Gate 1
34
60
Gate 1
G
VDS = –15 V, VGS(1,
GS(1 2) = –10 V
ID = –6 A
Gate 2
2.0
5
Gate 1
6.5
Gate 2
VDS = –15 V,
V VGS(1) = –0 V
VGS(2) = –10 V, ID = –0.15 A
Gate 2
0.5
Gate 1
6.0
Gate 2
0.2
C
nC
td(on)
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
15 V
VDD = –15
V,, RL = 15 W
ID ^ –1
1 A,
A VGEN = –10
10 V
V, RG = 6 W
IF = –1.25 A, di/dt = –100 A/ms
15
25
11
20
52
80
20
35
30
60
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70643
S-00652—Rev. E, 27-Mar-00
Si4807DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
30
30
VGS = 10, 9, 8, 7, 6, 5 V
25
20
I D – Drain Current (A)
I D – Drain Current (A)
25
4V
15
10
2, 1 V
5
3V
20
15
10
TC = 125C
5
25C
–55C
0
0
0
2
4
6
8
10
0
1
VDS – Drain-to-Source Voltage (V)
2
3
4
5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
3500
0.15
Ciss
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
3000
0.12
0.09
0.06
VGS = 4.5 V
VGS = 10 V
2500
2000
1500
1000
Coss
0.03
500
0
Crss
0
0
6
12
18
24
0
30
ID – Drain Current (A)
1.8
1.6
8
r DS(on) – On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
VDS = 15 V
ID = 6 A
6
4
2
0
0
5
10
15
20
25
Qg – Total Gate Charge (nC)
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
10
15
20
25
30
VDS – Drain-to-Source Voltage (V)
Gate Charge
10
5
30
35
On-Resistance vs. Junction Temperature
VG1S = 10 V
ID = 6 A
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
TJ – Junction Temperature (C)
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Si4807DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
r DS(on) – On-Resistance ( W )
0.15
I S – Source Current (A)
10
TJ = 150C
TJ = 25C
0.12
0.09
0.06
ID = 6 A
0.03
0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.8
60
0.6
50
TC = 25C
Single Pulse
ID = 250 mA
0.4
40
Power (W)
V GS(th) Variance (V)
2
0.2
–0.0
30
20
–0.2
10
–0.4
–0.6
–50
0
0
50
100
150
0.01
0.1
TJ – Temperature (C)
1
30
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
10–3
4. Surface Mounted
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70643
S-00652—Rev. E, 27-Mar-00
Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (VG1 = 0 V, 25C UNLESS NOTED)
Output Characteristics
4.0
On-Resistance vs. Drain Current
10
VG2S = 10 V
9V
3.5
I D – Drain Current (A)
3.0
2.5
r DS(on) – On-Resistance ( )
8V
7V
2.0
6V
1.5
5V
1.0
4V
3, 2, 1 V
0.5
0
8
6
4
VG2S = 4.5 V
2
VG2S = 10 V
0
0
2
4
6
8
0
10
0.2
VDS – Drain-to-Source Voltage (V)
0.8
1.0
On-Resistance vs. Gate-to-Source Voltage
10
8
r DS(on) – On-Resistance ( )
V G2S – Gate-to-Source Voltage (V)
0.6
ID – Drain Current (A)
Gate Charge
10
0.4
VDS = 15 V
ID = 150 mA
6
4
2
0
8
6
4
ID = 150 mA
2
0
0
0.4
0.8
1.2
Qg – Total Gate Charge (nC)
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
1.6
2.0
0
2
4
6
8
10
VG2S – Gate-to-Source Voltage (V)
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