Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET VDS (V) rDS(ON) () Gate 1 –30 30 Gate 2 ID (A) 0.035 @ VGS = –10 V 6 0.054 @ VGS = –4.5 V 4.8 1.3 @ VGS = –10 V 0.9 2.2 @ VGS = –4.5 V 0.7 D SO-8 G2 1 8 NC G1 2 7 D S 3 6 D S 4 5 D G2 G1 Top View S P-Channel MOSFET Parameter Symbol Gate 1 Gate 2 Drain-Source Voltage VDS –30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a TA = 25C Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS TA = 25C TA = 70C Operating Junction and Storage Temperature Range V 6 0.9 4.8 0.7 30 1.5 ID TA = 70C Maximum Power Dissipationa Unit A –1.25 2.3 PD W 1.0 TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 55 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70643 S-00652—Rev. E, 27-Mar-00 www.vishay.com FaxBack 408-970-5600 2-1 Si4807DY Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –1 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) rDS1(on) DS1( ) VDS = 0 V, VGS = "20 V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 55C –5 (G1 = G2) VDS = –5 V, VGS = –10 V Forward Transconductancea Diode Forward Voltagea –20 nA mA A (G1 = G2) VGS = –10 V, ID = –6 A 0.028 0.035 (G1 = G2) VGS = –4.5 V, ID = –4.8 A 0.041 0.054 VG1S = 0 V, VG2S = –10 V, ID = –0.15 A 1.05 1.3 VG1S = 0 V, VG2S = –4.5 V, ID = –0.1 A 1.65 2.2 a D i Source Drain Drain-Source S On-State On O State S Resistance R i rDS2(on) V gfs VDS = –15 V, ID = –6 A 13 VSD IS = –1.25 A, VGS = 0 V 0.7 –1.1 W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Qg Qgs Qgd Gate 1 34 60 Gate 1 G VDS = –15 V, VGS(1, GS(1 2) = –10 V ID = –6 A Gate 2 2.0 5 Gate 1 6.5 Gate 2 VDS = –15 V, V VGS(1) = –0 V VGS(2) = –10 V, ID = –0.15 A Gate 2 0.5 Gate 1 6.0 Gate 2 0.2 C nC td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 15 V VDD = –15 V,, RL = 15 W ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W IF = –1.25 A, di/dt = –100 A/ms 15 25 11 20 52 80 20 35 30 60 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70643 S-00652—Rev. E, 27-Mar-00 Si4807DY Vishay Siliconix Output Characteristics Transfer Characteristics 30 30 VGS = 10, 9, 8, 7, 6, 5 V 25 20 I D – Drain Current (A) I D – Drain Current (A) 25 4V 15 10 2, 1 V 5 3V 20 15 10 TC = 125C 5 25C –55C 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 3500 0.15 Ciss C – Capacitance (pF) r DS(on) – On-Resistance ( ) 3000 0.12 0.09 0.06 VGS = 4.5 V VGS = 10 V 2500 2000 1500 1000 Coss 0.03 500 0 Crss 0 0 6 12 18 24 0 30 ID – Drain Current (A) 1.8 1.6 8 r DS(on) – On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 6 A 6 4 2 0 0 5 10 15 20 25 Qg – Total Gate Charge (nC) Document Number: 70643 S-00652—Rev. E, 27-Mar-00 10 15 20 25 30 VDS – Drain-to-Source Voltage (V) Gate Charge 10 5 30 35 On-Resistance vs. Junction Temperature VG1S = 10 V ID = 6 A 1.4 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4807DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 r DS(on) – On-Resistance ( W ) 0.15 I S – Source Current (A) 10 TJ = 150C TJ = 25C 0.12 0.09 0.06 ID = 6 A 0.03 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.8 60 0.6 50 TC = 25C Single Pulse ID = 250 mA 0.4 40 Power (W) V GS(th) Variance (V) 2 0.2 –0.0 30 20 –0.2 10 –0.4 –0.6 –50 0 0 50 100 150 0.01 0.1 TJ – Temperature (C) 1 30 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70643 S-00652—Rev. E, 27-Mar-00 Si4807DY Vishay Siliconix TYPICAL CHARACTERISTICS (VG1 = 0 V, 25C UNLESS NOTED) Output Characteristics 4.0 On-Resistance vs. Drain Current 10 VG2S = 10 V 9V 3.5 I D – Drain Current (A) 3.0 2.5 r DS(on) – On-Resistance ( ) 8V 7V 2.0 6V 1.5 5V 1.0 4V 3, 2, 1 V 0.5 0 8 6 4 VG2S = 4.5 V 2 VG2S = 10 V 0 0 2 4 6 8 0 10 0.2 VDS – Drain-to-Source Voltage (V) 0.8 1.0 On-Resistance vs. Gate-to-Source Voltage 10 8 r DS(on) – On-Resistance ( ) V G2S – Gate-to-Source Voltage (V) 0.6 ID – Drain Current (A) Gate Charge 10 0.4 VDS = 15 V ID = 150 mA 6 4 2 0 8 6 4 ID = 150 mA 2 0 0 0.4 0.8 1.2 Qg – Total Gate Charge (nC) Document Number: 70643 S-00652—Rev. E, 27-Mar-00 1.6 2.0 0 2 4 6 8 10 VG2S – Gate-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-5